Fairchild/ON Semiconductor TIP112TU
- Part Number:
- TIP112TU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464701-TIP112TU
- Description:
- TRANS NPN DARL 100V 2A TO-220
- ECAD Model:
-
- Datasheet:
- TO220B03 Pkg Drawing TIP110-12
Fairchild/ON Semiconductor TIP112TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP112TU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.214g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation50W
- Current Rating2A
- Base Part NumberTIP112
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation2W
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A 4V
- Current - Collector Cutoff (Max)2mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage2.5V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min500
- Height16.51mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP112TU Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP112TU Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP112TU Applications
There are a lot of ON Semiconductor
TIP112TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP112TU Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP112TU Applications
There are a lot of ON Semiconductor
TIP112TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP112TU More Descriptions
TIP Series NPN 50 W 100 V 2 A Epitaxial Darlington Transistor - TO-220-3
Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 2A 2000mW 3-Pin(3 Tab) TO-220 Tube
NPN Epitaxial Silicon Darlington Transistor
Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 2A 2000mW 3-Pin(3 Tab) TO-220 Tube
NPN Epitaxial Silicon Darlington Transistor
The three parts on the right have similar specifications to TIP112TU.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP112TULAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-220-331.214gSILICON150°C TJTube2008e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors100V50W2ATIP1121NPNSingle2WNPN - Darlington100V2A1000 @ 1A 4V2mATO-220AB2.5V @ 8mA, 2A100V2.5V100V5V50016.51mm10.67mm4.83mmNo SVHCNoROHS3 CompliantLead Free--------------- -
----------------------------------------------60V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
----------------------------------------------80V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A
-
----------------------------------------------100V2.5V @ 80mA, 8ANPN - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 3A, 4V50µA8A
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
15 November 2023
S9015 PNP Transistor Equivalents, Structure, S9015 vs C9015 and More
Ⅰ. Overview of S9015 transistorⅡ. Structure and working principle of S9015 transistorⅢ. Pin configuration of S9015 transistorⅣ. Features of S9015 transistorⅤ. Technical parameters of S9015 transistorⅥ. Absolute maximum... -
16 November 2023
Get to Know the LM1117 Linear Voltage Regulator
Ⅰ. What is a voltage regulator?Ⅱ. Overview of LM1117 linear voltage regulatorⅢ. Pin configuration of LM1117Ⅳ. Features of LM1117 linear voltage regulatorⅤ. How does LM1117 linear voltage regulator... -
16 November 2023
7815 Voltage Regulator Symbol, Features, Mnufacturer and Working Principle
Ⅰ. Overview of 7815 voltage regulatorⅡ. 7815 symbol, footprint and 3D modelsⅢ. Features of 7815 voltage regulatorⅣ. Manufacturer of 7815 voltage regulatorⅤ. Technical parameters of 7815 voltage regulatorⅥ.... -
17 November 2023
IRF3710 Transistor Equivalents, Working Principle, Applications and Other Details
Ⅰ. Overview of IRF3710 transistorⅡ. Symbol, footprint and pin configuration of IRF3710 transistorⅢ. Features of IRF3710 transistorⅣ. Technical parameters of IRF3710 transistorⅤ. How does the IRF3710 transistor work?Ⅵ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.