Fairchild/ON Semiconductor TIP112
- Part Number:
- TIP112
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463285-TIP112
- Description:
- TRANS NPN DARL 100V 2A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP110-12 TIP112
Fairchild/ON Semiconductor TIP112 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP112.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Operating Temperature150°C TJ
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max2W
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A 4V
- Current - Collector Cutoff (Max)2mA
- Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)2A
- RoHS StatusROHS3 Compliant
TIP112 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
TIP112 Features
the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the supplier device package of TO-220AB
TIP112 Applications
There are a lot of Rochester Electronics, LLC
TIP112 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
TIP112 Features
the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the supplier device package of TO-220AB
TIP112 Applications
There are a lot of Rochester Electronics, LLC
TIP112 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP112 More Descriptions
TIP112 Series NPN 100 V 2 A Complementary Power Darlington Transistor - TO-220-3
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 2A 2000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar, NPN, 4V, 8mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON Transistor, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:2W;
TRANSISTOR, DARLINGTON TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 500hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 2A; Continuous Collector Current Ic Max: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 2A; Full Power Rating Temperature: 25°C; Hfe Min: 1000; No. of Transistors: 1; Power Dissipation Ptot Max: 50W; Transistor Type: Power Darlington; Voltage Vcbo: 100V
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 2A 2000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar, NPN, 4V, 8mA, TO-220, TubeSTMicroelectronics SCT
DARLINGTON Transistor, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:2W;
TRANSISTOR, DARLINGTON TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 500hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 2A; Continuous Collector Current Ic Max: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 2A; Full Power Rating Temperature: 25°C; Hfe Min: 1000; No. of Transistors: 1; Power Dissipation Ptot Max: 50W; Transistor Type: Power Darlington; Voltage Vcbo: 100V
The three parts on the right have similar specifications to TIP112.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP112Through HoleTO-220-3TO-220AB150°C TJObsolete1 (Unlimited)2WNPN - Darlington1000 @ 1A 4V2mA2.5V @ 8mA, 2A100V2AROHS3 Compliant---------------
-
--------------100V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A
-
--------------80V2.5V @ 8mA, 2APNP - DarlingtonTO-220-3-2WBulkTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
--------------100V2.5V @ 80mA, 8ANPN - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 3A, 4V50µA8A
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