STMicroelectronics TIP110

Name: TIP110
Brand: STMicroelectronics
SKU: 2465851-TIP110
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TIP110

Manufacturer:: STMicroelectronics

Ventron No:: 2465851-TIP110

Description:: TRANS NPN DARL 60V 2A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Part Pictures

Specifications

STMicroelectronics TIP110 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP110.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
50W
Current Rating
2A
Base Part Number
TIP110
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 4V
Current - Collector Cutoff (Max)
2mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

TIP110 Description
A Jedec TO-220 plastic container was used to house the TIP110 monolithic Darlington configuration of NPN transistors built on silicon epitaxial technology. They are designed to be used in high power, medium power linear and switching applications. According to the TIP110 datasheet, the Darlington Bipolar Power Transistor is intended for general purpose amplifier and low speed switching applications. Complementary devices include the TIP110, TIP111, and TIP112 (NPN) and TIP115, TIP116, and TIP117 (PNP).

TIP110 Features
Pb-free packages are available
Complementary PNP-NPN devices
Monolithic darlington configuration
STMicroelectronics preferred salestypes
Integrated antiparallel collector-emitter diode

TIP110 Applications
Low-speed switching
Medium power linear
General-purpose amplifier
Linear and switching industrial equipment

TIP110 More Descriptions

Electronics TIP110 Transistor NPN Silicon Darlington Bvceo=60V IC=2A TO-220 Case With Base-ter Shunt Resistors
TRANS NPN DARL 60V TO220-3
T-NPN SI- PO DARLINGTONNTE Electronics
Power Bipolar Transistor,

Product Comparison

The three parts on the right have similar specifications to TIP110.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Factory Lead Time

Published

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Voltage - Collector Emitter Breakdown (Max)

Frequency - Transition

View Compare
TIP110

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

60V

50W

2A

TIP110

3

1

NPN

Single

2W

SWITCHING

NPN - Darlington

60V

2A

1000 @ 1A 4V

2mA

TO-220AB

2.5V @ 8mA, 2A

60V

2.5V

60V

5V

1000

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TIP116

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 8mA, 2A

PNP - Darlington

TO-220-3

-

2W

Bulk

TO-220-3

150°C (TJ)

Through Hole

-

1000 @ 1A, 4V

2mA

2A

-

-

-

-

-

-

-

TIP110 vs TIP116
TIP121

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

4V @ 20mA, 5A

NPN - Darlington

TO-220AB

-

2W

Tube

TO-220-3

150°C (TJ)

Through Hole

-

1000 @ 3A, 3V

500µA

5A

-

-

-

-

-

-

-

TIP110 vs TIP121
TIP117 TIN/LEAD

Central Semiconductor Corp

-

Through Hole

TO-220-3

-

-

-

-65°C~150°C TJ

Bulk

e0

-

Active

1 (Unlimited)

-

-

Tin/Lead (Sn/Pb)

-

-

-

-

-

-

-

-

-

-

-

PNP - Darlington

-

-

1000 @ 1A 4V

-

-

2.5V @ 8mA, 2A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14 Weeks

2017

NOT SPECIFIED

not_compliant

NOT SPECIFIED

100V

25MHz

TIP110 vs TIP117 TIN/LEAD