ON Semiconductor TIP101G
- Part Number:
- TIP101G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2464725-TIP101G
- Description:
- TRANS NPN 80V 8A TO-220AB
- Datasheet:
- TIP101G
ON Semiconductor TIP101G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP101G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP10*
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation80W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
- Collector Emitter Breakdown Voltage80V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- Height6.35mm
- Length6.35mm
- Width25.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP101G More Descriptions
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
TIP Series 80 V 8 A NPN Medium Power Darlington Silicon Transistor - TO-220AB
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 80V 8A 2000mW 3-Pin(3 Tab) TO-220AB Tube
The TIP100 is an 8 A 60 V plastic medium-power complementary silicon transistor designed for general-purpose amplifier and low-speed switching applications.
TRANSISTOR, NPN, 80V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 200hFE; Transistor Case
TIP Series 80 V 8 A NPN Medium Power Darlington Silicon Transistor - TO-220AB
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 80V 8A 2000mW 3-Pin(3 Tab) TO-220AB Tube
The TIP100 is an 8 A 60 V plastic medium-power complementary silicon transistor designed for general-purpose amplifier and low-speed switching applications.
TRANSISTOR, NPN, 80V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 200hFE; Transistor Case
The three parts on the right have similar specifications to TIP101G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP101GACTIVE (Last Updated: 1 week ago)2 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors80V2W2608A40TIP10*31NPNSingle80WCOLLECTORAMPLIFIERNPN - Darlington80V8A1000 @ 3A 4V50μATO-220AB2.5V @ 80mA, 8A80V2V80V5V2006.35mm6.35mm25.4mmNo SVHCNoROHS3 CompliantLead Free---------------
-
---------------------------------------------------60V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
---------------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
-
---------------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A
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