Micro Commercial Co TIP100-BP
- Part Number:
- TIP100-BP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 2845723-TIP100-BP
- Description:
- TRANS NPN DARL 60V 8A TO-220
- Datasheet:
- TIP100(101,102)
Micro Commercial Co TIP100-BP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co TIP100-BP.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberTIP10*
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max80W
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)8A
- RoHS StatusROHS3 Compliant
TIP100-BP Overview
In this device, the DC current gain is 1000 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 80mA, 8A.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
TIP100-BP Features
the DC current gain for this device is 1000 @ 3A 4V
the vce saturation(Max) is 2.5V @ 80mA, 8A
TIP100-BP Applications
There are a lot of Micro Commercial Co
TIP100-BP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 80mA, 8A.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
TIP100-BP Features
the DC current gain for this device is 1000 @ 3A 4V
the vce saturation(Max) is 2.5V @ 80mA, 8A
TIP100-BP Applications
There are a lot of Micro Commercial Co
TIP100-BP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP100-BP More Descriptions
TRANS NPN DARL 60V 8A TO-220
NPN PLASTIC MEDIUM-POWER SILICON TRANSISTORS / BULK (TUBE)
NPN PLASTIC MEDIUM-POWER SILICON TRANSISTORS / BULK (TUBE)
The three parts on the right have similar specifications to TIP100-BP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Reach Compliance CodeFrequency - TransitionView Compare
-
TIP100-BP12 WeeksThrough HoleTO-220-3NOSILICON-55°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIEDTIP10*3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN RESISTOR80WNPNNPN - Darlington1000 @ 3A 4V50μATO-220AB2.5V @ 80mA, 8A60V8AROHS3 Compliant-----------------
-
----------------------------------100V4V @ 20mA, 5ANPN - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 3A, 3V500µA5A--
-
----------------------------------80V2.5V @ 8mA, 2APNP - DarlingtonTO-220-3-2WBulkTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A--
-
14 WeeksThrough HoleTO-220-3---65°C~150°C TJBulk2017e0-Active1 (Unlimited)--Tin/Lead (Sn/Pb)-NOT SPECIFIEDNOT SPECIFIED--------PNP - Darlington1000 @ 1A 4V--2.5V @ 8mA, 2A100V-Non-RoHS Compliant--------------not_compliant25MHz
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