STMicroelectronics STPSA42
- Part Number:
- STPSA42
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2845403-STPSA42
- Description:
- TRANS NPN 300V 0.5A TO-92
- Datasheet:
- STPSA42
STMicroelectronics STPSA42 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STPSA42.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTPSA42
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STPSA42 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
STPSA42 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
STPSA42 Applications
There are a lot of STMicroelectronics
STPSA42 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
STPSA42 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
STPSA42 Applications
There are a lot of STMicroelectronics
STPSA42 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
STPSA42 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Bag
Bipolar Transistors - BJT NPN General Purpose
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Bag
Bipolar Transistors - BJT NPN General Purpose
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