ON Semiconductor SMUN5313DW1T3G

Name: SMUN5313DW1T3G
Brand: ON Semiconductor
SKU: 2844583-SMUN5313DW1T3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SMUN5313DW1T3G

Manufacturer:: ON Semiconductor

Ventron No:: 2844583-SMUN5313DW1T3G

Description:: TRANS NPN/PNP PREBIAS SOT363

ECAD Model:

Datasheet:: SMUN5313DW1T3G

Specifications

ON Semiconductor SMUN5313DW1T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5313DW1T3G.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
187mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
6
Reference Standard
AEC-Q101
Operating Temperature (Max)
150°C
Operating Temperature (Min)
-55°C
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max
187mW
Polarity/Channel Type
NPN AND PNP
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage
50V
hFE Min
80
Resistor - Base (R1)
47k Ω
Resistor - Emitter Base (R2)
47k Ω
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SMUN5313DW1T3G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet SMUN5313DW1T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SMUN5313DW1T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SMUN5313DW1T3G More Descriptions

50 V 100 mA 47kOhms 187mW 1 NPN/1 PNP Pre-Biased Bipolar Transistor-SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-363 T/R - Tape and Reel
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
Complementary Bipolar Digital Transistor (BRT)

Product Comparison

The three parts on the right have similar specifications to SMUN5313DW1T3G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Reference Standard

Operating Temperature (Max)

Operating Temperature (Min)

Number of Elements

Configuration

Power - Max

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

hFE Min

Resistor - Base (R1)

Resistor - Emitter Base (R2)

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

Base Part Number

Polarity

Element Configuration

Transistor Application

Halogen Free

Max Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Height

Length

Width

Radiation Hardening

Max Breakdown Voltage

Max Output Current

Operating Supply Voltage

View Compare
SMUN5313DW1T3G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

8 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

SILICON

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

BUILT IN BIAS RESISTANCE RATIO IS 1

BIP General Purpose Small Signal

187mW

GULL WING

NOT SPECIFIED

NOT SPECIFIED

6

AEC-Q101

150°C

-55°C

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

187mW

NPN AND PNP

1 NPN, 1 PNP - Pre-Biased (Dual)

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

80

47k Ω

47k Ω

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SMUN5115DW1T1G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

2 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

-

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

BUILT IN BIAS RESISTOR

BIP General Purpose Small Signal

187mW

GULL WING

-

-

6

AEC-Q101

-

-

2

-

-

-

2 PNP - Pre-Biased (Dual)

50V

100mA

160 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

160

10k Ω

-

ROHS3 Compliant

Lead Free

150°C

-55°C

MUN51**DW1T

PNP

Dual

SWITCHING

Halogen Free

10kHz

250mV

50V

6V

1mm

2.2mm

1.35mm

No

-

-

-

SMUN5313DW1T3G vs SMUN5115DW1T1G
SMUN5113DW1T1G

ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

8 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

-

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

BUILT IN BIAS RESISTANCE RATIO IS 1

BIP General Purpose Small Signal

187mW

GULL WING

-

-

6

AEC-Q101

-

-

2

-

-

-

2 PNP - Pre-Biased (Dual)

50V

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

80

47k Ω

47k Ω

ROHS3 Compliant

Lead Free

150°C

-55°C

MUN51**DW1T

PNP

Dual

SWITCHING

Halogen Free

-

-

-

-

-

-

-

No

50V

-

-

SMUN5313DW1T3G vs SMUN5113DW1T1G
SMUN5214DW1T1G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

8 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

-

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

BUILT IN BIAS RESISTANCE RATIO IS 4.7

BIP General Purpose Small Signal

187mW

GULL WING

-

-

6

AEC-Q101

-

-

2

-

-

-

2 NPN - Pre-Biased (Dual)

50V

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

80

10k Ω

47k Ω

ROHS3 Compliant

Lead Free

150°C

-55°C

MUN52**DW1T

NPN

Dual

SWITCHING

Halogen Free

10kHz

250mV

50V

6V

1mm

2.2mm

1.35mm

No

50V

100mA

50V

SMUN5313DW1T3G vs SMUN5214DW1T1G