ON Semiconductor SMMBT3906LT3G
- Part Number:
- SMMBT3906LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2464977-SMMBT3906LT3G
- Description:
- TRANS PNP 40V 0.2A SOT-23
- Datasheet:
- SMMBT3906LT3G
ON Semiconductor SMMBT3906LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMMBT3906LT3G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency250MHz
- Base Part NumberMMBT3906
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency250MHz
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- VCEsat-Max0.4 V
- Turn On Time-Max (ton)70ns
- Collector-Base Capacitance-Max4.5pF
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SMMBT3906LT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.When collector current reaches its maximum, it can reach 200mA volts.
SMMBT3906LT3G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
SMMBT3906LT3G Applications
There are a lot of ON Semiconductor
SMMBT3906LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.When collector current reaches its maximum, it can reach 200mA volts.
SMMBT3906LT3G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
SMMBT3906LT3G Applications
There are a lot of ON Semiconductor
SMMBT3906LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SMMBT3906LT3G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 40V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
200 mA, 40 V PNP Bipolar Junction Transistor
SMMBT Series 40 V 800 mA SMT PNP Silicon General Purpose Transistor - SOT-23
40V 225mW 200mA 100@10mA1V 250MHz PNP 400mV@50mA5mA -65¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 40V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
200 mA, 40 V PNP Bipolar Junction Transistor
SMMBT Series 40 V 800 mA SMT PNP Silicon General Purpose Transistor - SOT-23
40V 225mW 200mA 100@10mA1V 250MHz PNP 400mV@50mA5mA -65¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
The three parts on the right have similar specifications to SMMBT3906LT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)VCEsat-MaxTurn On Time-Max (ton)Collector-Base Capacitance-MaxRadiation HardeningRoHS StatusLead FreeContact PlatingSubcategoryCurrent - Collector Cutoff (Max)Collector Emitter Saturation VoltageMax Breakdown VoltagehFE MinHeightLengthWidthREACH SVHCWeightReference StandardTransistor ApplicationContinuous Collector CurrentPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Current - Collector (Ic) (Max)View Compare
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SMMBT3906LT3GACTIVE (Last Updated: 4 days ago)5 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99Tin (Sn)300mWDUALGULL WING250MHzMMBT390631Single300mW250MHzPNPPNP40V200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V250MHz40V5V0.4 V70ns4.5pFNoROHS3 CompliantLead Free------------------
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ACTIVE (Last Updated: 19 hours ago)9 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)-2010e3yesActive1 (Unlimited)3EAR99-300mWDUALGULL WING50MHzMMBTA9231Single300mW50MHzPNPPNP300V500mA25 @ 30mA 10V500mV @ 2mA, 20mA300V50MHz300V5V---NoROHS3 CompliantLead FreeTinOther Transistors250nA ICBO-500mV300V251.11mm3.04mm2.64mmNo SVHC-------
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ACTIVE (Last Updated: 4 days ago)4 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)-2012e3yesActive1 (Unlimited)3EAR99Tin (Sn)150mWDUALGULL WING-MMBTA0631Single-100MHzNPNNPN80V500mA100 @ 100mA 1V250mV @ 10mA, 100mA80V100MHz80V4V---NoROHS3 CompliantLead Free-Other Transistors100nA250mV-100----6.208546mgAEC-Q101AMPLIFIER500mA---
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ACTIVE (Last Updated: 1 day ago)4 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012006e3yesActive1 (Unlimited)3EAR99Tin (Sn)150mWDUALGULL WING--31Single-250MHzPNPPNP400mV200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V250MHz-40V--70ns--ROHS3 CompliantLead Free------------AMPLIFIER-26030200mA
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