SMMBT3906LT3G

ON Semiconductor SMMBT3906LT3G

Part Number:
SMMBT3906LT3G
Manufacturer:
ON Semiconductor
Ventron No:
2464977-SMMBT3906LT3G
Description:
TRANS PNP 40V 0.2A SOT-23
ECAD Model:
Datasheet:
SMMBT3906LT3G

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Specifications
ON Semiconductor SMMBT3906LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMMBT3906LT3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    5 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Frequency
    250MHz
  • Base Part Number
    MMBT3906
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Gain Bandwidth Product
    250MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA 1V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    250MHz
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    5V
  • VCEsat-Max
    0.4 V
  • Turn On Time-Max (ton)
    70ns
  • Collector-Base Capacitance-Max
    4.5pF
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SMMBT3906LT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.When collector current reaches its maximum, it can reach 200mA volts.

SMMBT3906LT3G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz


SMMBT3906LT3G Applications
There are a lot of ON Semiconductor
SMMBT3906LT3G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
SMMBT3906LT3G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 40V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
200 mA, 40 V PNP Bipolar Junction Transistor
SMMBT Series 40 V 800 mA SMT PNP Silicon General Purpose Transistor - SOT-23
40V 225mW 200mA 100@10mA1V 250MHz PNP 400mV@50mA5mA -65¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Product Comparison
The three parts on the right have similar specifications to SMMBT3906LT3G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Frequency
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    VCEsat-Max
    Turn On Time-Max (ton)
    Collector-Base Capacitance-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Subcategory
    Current - Collector Cutoff (Max)
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Weight
    Reference Standard
    Transistor Application
    Continuous Collector Current
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Current - Collector (Ic) (Max)
    View Compare
  • SMMBT3906LT3G
    SMMBT3906LT3G
    ACTIVE (Last Updated: 4 days ago)
    5 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    300mW
    DUAL
    GULL WING
    250MHz
    MMBT3906
    3
    1
    Single
    300mW
    250MHz
    PNP
    PNP
    40V
    200mA
    100 @ 10mA 1V
    400mV @ 5mA, 50mA
    40V
    250MHz
    40V
    5V
    0.4 V
    70ns
    4.5pF
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SMMBTA92LT1G
    ACTIVE (Last Updated: 19 hours ago)
    9 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2010
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    300mW
    DUAL
    GULL WING
    50MHz
    MMBTA92
    3
    1
    Single
    300mW
    50MHz
    PNP
    PNP
    300V
    500mA
    25 @ 30mA 10V
    500mV @ 2mA, 20mA
    300V
    50MHz
    300V
    5V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin
    Other Transistors
    250nA ICBO
    -500mV
    300V
    25
    1.11mm
    3.04mm
    2.64mm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
  • SMMBTA06WT1G
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150mW
    DUAL
    GULL WING
    -
    MMBTA06
    3
    1
    Single
    -
    100MHz
    NPN
    NPN
    80V
    500mA
    100 @ 100mA 1V
    250mV @ 10mA, 100mA
    80V
    100MHz
    80V
    4V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Other Transistors
    100nA
    250mV
    -
    100
    -
    -
    -
    -
    6.208546mg
    AEC-Q101
    AMPLIFIER
    500mA
    -
    -
    -
  • SMMBT3906WT1G
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Surface Mount
    SC-70, SOT-323
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150mW
    DUAL
    GULL WING
    -
    -
    3
    1
    Single
    -
    250MHz
    PNP
    PNP
    400mV
    200mA
    100 @ 10mA 1V
    400mV @ 5mA, 50mA
    40V
    250MHz
    -40V
    -
    -
    70ns
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    AMPLIFIER
    -
    260
    30
    200mA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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