ON Semiconductor SMMBT2222AWT1G
- Part Number:
- SMMBT2222AWT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845961-SMMBT2222AWT1G
- Description:
- TRANS NPN 40V 0.6A SOT323
- ECAD Model:
-
- Datasheet:
- SMMBT2222AWT1G
ON Semiconductor SMMBT2222AWT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMMBT2222AWT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency300MHz
- Base Part NumberMMBT2222A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min75
- Turn Off Time-Max (toff)285ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SMMBT2222AWT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
SMMBT2222AWT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SMMBT2222AWT1G Applications
There are a lot of ON Semiconductor
SMMBT2222AWT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
SMMBT2222AWT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SMMBT2222AWT1G Applications
There are a lot of ON Semiconductor
SMMBT2222AWT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SMMBT2222AWT1G More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 150mW Automotive 3-Pin SC-70 T/R
Ss Sc70 Gp Xstr Npn 40V/Reel |Onsemi SMMBT2222AWT1G
Small Signal Bipolar Transistors
Trans GP BJT NPN 40V 0.6A 150mW Automotive 3-Pin SC-70 T/R
Ss Sc70 Gp Xstr Npn 40V/Reel |Onsemi SMMBT2222AWT1G
Small Signal Bipolar Transistors
The three parts on the right have similar specifications to SMMBT2222AWT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Radiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Current - Collector Cutoff (Max)Max Breakdown VoltageTurn On Time-Max (ton)HeightLengthWidthWeightReference StandardContinuous Collector CurrentSeriesTime@Peak Reflow Temperature-Max (s)Current - Collector (Ic) (Max)View Compare
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SMMBT2222AWT1GACTIVE (Last Updated: 4 days ago)6 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors150mWDUALGULL WING300MHzMMBT2222A31Single150mWAMPLIFIER300MHzNPNNPN40V600mA100 @ 150mA 10V1V @ 50mA, 500mA40V300MHz1V75V6V75285nsNoROHS3 CompliantLead Free-------------- -
ACTIVE (Last Updated: 4 days ago)5 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors300mWDUALGULL WING200MHzMMBT2907A31Single300mW-200MHzPNPPNP60V600mA100 @ 150mA 10V1.6V @ 50mA, 500mA60V200MHz-400mV60V-5V50-NoROHS3 CompliantLead Free26010nA ICBO60V45ns1.11mm3.04mm2.64mm------
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ACTIVE (Last Updated: 4 days ago)4 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors150mWDUALGULL WING-MMBTA0631Single-AMPLIFIER100MHzNPNNPN80V500mA100 @ 100mA 1V250mV @ 10mA, 100mA80V100MHz250mV80V4V100-NoROHS3 CompliantLead Free-100nA-----6.208546mgAEC-Q101500mA---
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ACTIVE (Last Updated: 1 day ago)4 WeeksSurface MountSC-70, SOT-323YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)-150mWDUALGULL WING--31Single-AMPLIFIER250MHzPNPPNP400mV200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V250MHz--40V----ROHS3 CompliantLead Free260--70ns------Automotive, AEC-Q10130200mA
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