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SI7844DP-T1-E3

Vishay Siliconix SI7844DP-T1-E3

Part Number:
SI7844DP-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2847812-SI7844DP-T1-E3
Description:
MOSFET 2N-CH 30V 6.4A PPAK SO-8
ECAD Model:
Datasheet:
SI7844DP-T1-E3

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Specifications
Vishay Siliconix SI7844DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7844DP-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8 Dual
  • Number of Pins
    8
  • Packaging
    Cut Tape (CT)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    22mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    1.4W
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    SI7844
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    6.4A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    10ns
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    10A
  • Threshold Voltage
    2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6.4A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    2.4 V
  • Height
    1.07mm
  • Length
    5.99mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7844DP-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI7844DP-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI7844DP-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI7844DP-T1-E3 More Descriptions
Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R / MOSFET 2N-CH 30V 6.4A PPAK SO-8
MOSFET; 30V N-Channel 22 & 30 MOHM@10V | Siliconix / Vishay SI7844DP-T1-E3
MOSFET, DUAL, N, SO-8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:10A; Current Id Max:10A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):22mohm; Package / Case:SOIC; Power Dissipation Pd:1.4W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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