Vishay Siliconix SI6933DQ-T1-E3
- Part Number:
- SI6933DQ-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2475594-SI6933DQ-T1-E3
- Description:
- MOSFET 2P-CH 30V 8-TSSOP
- ECAD Model:
-
- Datasheet:
- SI6933DQ-T1-E3
Vishay Siliconix SI6933DQ-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI6933DQ-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Weight157.991892mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance45mOhm
- Terminal FinishMATTE TIN
- Max Power Dissipation1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- Turn On Delay Time13 ns
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs45m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA (Min)
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)30V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)10 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)-2.3A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)3.5A
- Drain to Source Breakdown Voltage-30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1mm
- Length3mm
- Width4.4mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI6933DQ-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI6933DQ-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI6933DQ-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI6933DQ-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI6933DQ-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI6933DQ-T1-E3 More Descriptions
P-CHAN 30V TRENCH 32M CELL MOSFET D | Siliconix / Vishay SI6933DQ-T1-E3
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-TSSOP ;RoHS Compliant: Yes
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-TSSOP ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI6933DQ-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureHeightLengthWidthRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureBase Part NumberNumber of ChannelsPower - MaxDrain to Source ResistanceRds On MaxFactory Lead TimeContact PlatingPbfree CodeSubcategoryCurrent - Continuous Drain (Id) @ 25°CThreshold VoltageREACH SVHCRadiation HardeningNominal VgsView Compare
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SI6933DQ-T1-E3Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8157.991892mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3Obsolete1 (Unlimited)8EAR9945mOhmMATTE TIN1WGULL WING260408Not Qualified2DualENHANCEMENT MODE1W13 ns2 P-Channel (Dual)45m Ω @ 3.5A, 10V1V @ 250μA (Min)30nC @ 10V10ns30VN-CHANNEL AND P-CHANNEL10 ns33 ns-2.3A20V3.5A-30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1mm3mm4.4mmROHS3 CompliantLead Free------------------ -
Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8157.991892mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2015-Obsolete1 (Unlimited)----1.1W------Dual--25 ns2 P-Channel (Dual)34mOhm @ 4.6A, 4.5V450mV @ 250μA (Min)40nC @ 4.5V35ns12V-40 ns80 ns4.6A8V--12V-Logic Level Gate1mm3mm4.4mmROHS3 Compliant-8-TSSOP150°C-55°CSI696921.1W34mOhm34 mΩ---------
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Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8157.991892mgSILICON-55°C~150°C TJTape & Reel (TR)-2012e3Active1 (Unlimited)8EAR9930MOhm-830mWGULL WING260408-2DualENHANCEMENT MODE830mW6 ns2 N-Channel (Dual)30m Ω @ 4.5A, 4.5V1V @ 250μA10.5nC @ 4.5V16ns20V-16 ns46 ns4.5A8V4.1A-METAL-OXIDE SEMICONDUCTORLogic Level Gate1mm3mm4.4mmROHS3 CompliantLead Free---SI6926----14 WeeksTinyesFET General Purpose Powers4.1A1VUnknownNo-
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Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8---55°C~150°C TJTape & Reel (TR)TrenchFET®-e3Obsolete1 (Unlimited)--31MOhmMatte Tin (Sn)830mW-----2DualENHANCEMENT MODE1.14W35 ns2 P-Channel (Dual)31m Ω @ 4.8A, 4.5V900mV @ 300μA25nC @ 4.5V55ns20V-52 ns120 ns4.1A8V-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate---ROHS3 CompliantLead Free---SI6981-------Other Transistors--UnknownNo-400 mV
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