Vishay Siliconix SI3900DV-T1-GE3
- Part Number:
- SI3900DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2473884-SI3900DV-T1-GE3
- Description:
- MOSFET 2N-CH 20V 2A 6-TSOP
- ECAD Model:
-
- Datasheet:
- SI3900DV-T1-GE3
Vishay Siliconix SI3900DV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3900DV-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishPURE MATTE TIN
- Max Power Dissipation830mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSI3900
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation830mW
- Turn On Delay Time10 ns
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs125m Ω @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C2A
- Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
- Rise Time30ns
- Fall Time (Typ)6 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)2.4A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)2A
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI3900DV-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI3900DV-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI3900DV-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI3900DV-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI3900DV-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI3900DV-T1-GE3 More Descriptions
SI3900DV-T1-GE3 Dual N-channel MOSFET Transistor; 2 A; 20 V; 6-Pin TSOP
TSOP6 20V DUAL N-CH (D-S) TRENCH
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V
Dual, 20Volt, 2.4Amp, 125mohm RdsOn4.5V, Tsop-6
French Electronic Distributor since 1988
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.125ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
TSOP6 20V DUAL N-CH (D-S) TRENCH
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V
Dual, 20Volt, 2.4Amp, 125mohm RdsOn4.5V, Tsop-6
French Electronic Distributor since 1988
Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.125ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI3900DV-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureRadiation HardeningRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureNumber of ChannelsPower - MaxDrain to Source Voltage (Vdss)Drain to Source ResistanceRds On MaxContact PlatingSubcategoryReach Compliance CodeQualification StatusTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsThreshold VoltageJEDEC-95 CodeDrain-source On Resistance-MaxNominal VgsREACH SVHCLead FreeView Compare
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SI3900DV-T1-GE314 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Active1 (Unlimited)6EAR99PURE MATTE TIN830mWGULL WING26030SI390062DualENHANCEMENT MODE830mW10 ns2 N-Channel (Dual)125m Ω @ 2.4A, 4.5V1.5V @ 250μA2A4nC @ 4.5V30ns6 ns14 ns2.4A12V2A20VMETAL-OXIDE SEMICONDUCTORLogic Level GateNoROHS3 Compliant--------------------- -
-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6-19.986414mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Obsolete1 (Unlimited)---1.15W------Dual---2 P-Channel (Dual)125mOhm @ 2.5A, 4.5V450mV @ 250μA (Min)-6nC @ 4.5V---2.5A8V---Logic Level Gate-ROHS3 Compliant6-TSOP150°C-55°C21.15W8V125mOhm125 mΩ------------
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14 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3Active1 (Unlimited)6EAR99-1.4WGULL WINGNOT SPECIFIEDNOT SPECIFIED-62DualENHANCEMENT MODE1.14W10 ns2 P-Channel (Dual)111m Ω @ 2.5A, 10V2.2V @ 250μA2.9A8nC @ 10V16ns12 ns17 ns-2.9A20V--30VMETAL-OXIDE SEMICONDUCTORStandard-ROHS3 Compliant---2-30V--TinOther TransistorsunknownNot QualifiedSWITCHING210pF @ 15V-1.2VMO-193AA0.111Ohm-1.2 VNo SVHCLead Free
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-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66---55°C~150°C TJTape & Reel (TR)TrenchFET®--Obsolete1 (Unlimited)---800mW---SI3981-2Dual-800mW30 ns2 P-Channel (Dual)185mOhm @ 1.9A, 4.5V1.1V @ 250μA1.6A5nC @ 4.5V50ns50 ns45 ns-1.9A8V--20V-Logic Level GateNoROHS3 Compliant6-TSOP150°C-55°C-800mW20V185mOhm185 mΩ------------
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