Vishay Siliconix SI1029X-T1-E3
- Part Number:
- SI1029X-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2477813-SI1029X-T1-E3
- Description:
- MOSFET N/P-CH 60V SOT563F
- ECAD Model:
-
- Datasheet:
- SI1029X-T1-E3
Vishay Siliconix SI1029X-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1029X-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- Supplier Device PackageSC-89-6
- Weight32.006612mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Resistance4Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation250mW
- Base Part NumberSI1029
- Number of Elements2
- Number of Channels2
- Element ConfigurationSingle
- Power Dissipation250mW
- Turn On Delay Time20 ns
- Power - Max250mW
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds30pF @ 25V
- Current - Continuous Drain (Id) @ 25°C305mA 190mA
- Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
- Drain to Source Voltage (Vdss)60V
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)500mA
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Dual Supply Voltage60V
- Input Capacitance30pF
- FET FeatureLogic Level Gate
- Drain to Source Resistance4Ohm
- Rds On Max3 Ω
- Nominal Vgs2.5 V
- Height600μm
- Length1.7mm
- Width1.2mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI1029X-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1029X-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1029X-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1029X-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1029X-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI1029X-T1-E3 More Descriptions
60V (D-S) P&N COMP MOSFET W/ESD PRO | Siliconix / Vishay SI1029X-T1-E3
Trans MOSFET N/P-CH 60V 0.305A 6-Pin SC-89 T/R / Complementary N- and P-Channel 60-V (D-S) MOSFET | MOSFET N/P-CH 60V SOT563F
MOSFET, DUAL, NP, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:250mW; Transistor Case Style:SC-89; No. of Pins:6; Current Id Max:500mA; Package / Case:SC-89; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N/P-CH 60V 0.305A 6-Pin SC-89 T/R / Complementary N- and P-Channel 60-V (D-S) MOSFET | MOSFET N/P-CH 60V SOT563F
MOSFET, DUAL, NP, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:250mW; Transistor Case Style:SC-89; No. of Pins:6; Current Id Max:500mA; Package / Case:SC-89; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
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