Microsemi Corporation SG2003J
- Part Number:
- SG2003J
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2461019-SG2003J
- Description:
- TRANS 7NPN DARL 50V 0.5A 16DIP
- Datasheet:
- SG2003J
Microsemi Corporation SG2003J technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation SG2003J.
- Lifecycle StatusIN PRODUCTION (Last Updated: 2 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case16-CDIP (0.300, 7.62mm)
- Number of Pins16
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations16
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureCMOS COMPATIBLE
- Terminal PositionDUAL
- Output Voltage95V
- Number of Elements7
- PolarityNPN
- ConfigurationCOMPLEX
- Output Current100A
- Transistor ApplicationAMPLIFIER
- Transistor Type7 NPN Darlington
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA 2V
- Vce Saturation (Max) @ Ib, Ic1.6V @ 500μA, 350mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage1.6V
- Max Breakdown Voltage50V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
SG2003J Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SG2003J or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SG2003J. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SG2003J or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SG2003J. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SG2003J More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon
Driver Darlington Transistor, 7 NPNs 50 to 95V, 500 to 600ma - 5V TTL, CMOS
Trans Darlington NPN 50V 0.5A 16-Pin CDIP Tube
Driver Darlington Transistor, 7 NPNs 50 to 95V, 500 to 600ma - 5V TTL, CMOS
Trans Darlington NPN 50V 0.5A 16-Pin CDIP Tube
The three parts on the right have similar specifications to SG2003J.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionOutput VoltageNumber of ElementsPolarityConfigurationOutput CurrentTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Peak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardQualification StatusPolarity/Channel TypePin CountElement ConfigurationView Compare
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SG2003JIN PRODUCTION (Last Updated: 2 weeks ago)20 WeeksThrough HoleThrough Hole16-CDIP (0.300, 7.62mm)16SILICON150°C TJTube1997e0noDiscontinued1 (Unlimited)16EAR99Tin/Lead (Sn/Pb)CMOS COMPATIBLEDUAL95V7NPNCOMPLEX100AAMPLIFIER7 NPN Darlington50V500mA1000 @ 350mA 2V1.6V @ 500μA, 350mA50V1.6V50VNoRoHS CompliantContains Lead------------
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-10 Weeks-Through Hole16-CDIP (0.300, 7.62mm)--150°C TJTube---Active1 (Unlimited)-----------7 NPN Darlington--1000 @ 350mA 2V1.6V @ 500μA, 350mA----RoHS Compliant-16-CDIP50V500mA--------
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IN PRODUCTION (Last Updated: 1 month ago)10 WeeksThrough HoleThrough HoleCDIP-SILICON150°C TJTube1997e0noActive1 (Unlimited)16EAR99Tin/Lead (Sn/Pb)CMOS COMPATIBLEDUAL-7-COMPLEX-AMPLIFIER7 NPN Darlington1.9V600mA900 @ 500mA 2V1.9V @ 600μA, 500mA50V--YesNon-RoHS Compliant-16-CDIP--NOT SPECIFIEDnot_compliantNOT SPECIFIEDMIL-STD-883Not QualifiedNPN--
-
IN PRODUCTION (Last Updated: 2 weeks ago)10 WeeksThrough HoleThrough Hole16-CDIP (0.300, 7.62mm)16SILICON150°C TJTube1997e0noActive1 (Unlimited)16EAR99TIN LEADCMOS COMPATIBLEDUAL-7NPN--AMPLIFIER7 NPN Darlington95V500mA1000 @ 350mA 2V1.6V @ 500μA, 350mA95V1.6V-NoRoHS Compliant----------16Single
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