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SG2003J-883B

Microsemi Corporation SG2003J-883B

Part Number:
SG2003J-883B
Manufacturer:
Microsemi Corporation
Ventron No:
2461094-SG2003J-883B
Description:
TRANS 7NPN DARL 50V 0.5A 16DIP
ECAD Model:
Datasheet:
SG2003J-883B

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Specifications
Microsemi Corporation SG2003J-883B technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation SG2003J-883B.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    16-CDIP (0.300, 7.62mm)
  • Number of Pins
    16
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    16
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    16
  • Reference Standard
    MIL-STD-883B
  • Qualification Status
    Not Qualified
  • Number of Elements
    7
  • Polarity
    NPN
  • Transistor Application
    SWITCHING
  • Transistor Type
    7 NPN Darlington
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 350mA 2V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 500μA, 350mA
  • Collector Emitter Breakdown Voltage
    50V
  • Collector Emitter Saturation Voltage
    1.6V
  • Radiation Hardening
    Yes
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Contains Lead
Description
SG2003J-883B Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SG2003J-883B or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SG2003J-883B. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SG2003J-883B More Descriptions
Driver Darlington Transistor, 7 NPNs 50 to 95V, 500 to 600ma - 5V TTL, CMOS
Trans Darlington NPN 50V 0.5A 16-Pin CDIP Tube
TRANS 7NPN DARL 50V 0.5A 16DIP
TRANSIENT VOLTAGE SUPPRESSION DIODE (ARRAY)
Product Comparison
The three parts on the right have similar specifications to SG2003J-883B.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Reference Standard
    Qualification Status
    Number of Elements
    Polarity
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Configuration
    Polarity/Channel Type
    Output Voltage
    Output Current
    Max Breakdown Voltage
    Element Configuration
    View Compare
  • SG2003J-883B
    SG2003J-883B
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    14 Weeks
    Through Hole
    Through Hole
    16-CDIP (0.300, 7.62mm)
    16
    SILICON
    150°C TJ
    Tube
    1997
    e0
    no
    Active
    1 (Unlimited)
    16
    EAR99
    Tin/Lead (Sn/Pb)
    HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
    DUAL
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    16
    MIL-STD-883B
    Not Qualified
    7
    NPN
    SWITCHING
    7 NPN Darlington
    50V
    500mA
    1000 @ 350mA 2V
    1.6V @ 500μA, 350mA
    50V
    1.6V
    Yes
    RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • SG2013J-883B
    SG2013J-883B
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    10 Weeks
    Through Hole
    Through Hole
    CDIP
    -
    SILICON
    150°C TJ
    Tube
    1997
    e0
    no
    Active
    1 (Unlimited)
    16
    EAR99
    Tin/Lead (Sn/Pb)
    CMOS COMPATIBLE
    DUAL
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    MIL-STD-883
    Not Qualified
    7
    -
    AMPLIFIER
    7 NPN Darlington
    1.9V
    600mA
    900 @ 500mA 2V
    1.9V @ 600μA, 500mA
    50V
    -
    Yes
    Non-RoHS Compliant
    -
    16-CDIP
    COMPLEX
    NPN
    -
    -
    -
    -
    SG2003J-883B vs SG2013J-883B
  • SG2003J
    SG2003J
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 2 weeks ago)
    20 Weeks
    Through Hole
    Through Hole
    16-CDIP (0.300, 7.62mm)
    16
    SILICON
    150°C TJ
    Tube
    1997
    e0
    no
    Discontinued
    1 (Unlimited)
    16
    EAR99
    Tin/Lead (Sn/Pb)
    CMOS COMPATIBLE
    DUAL
    -
    -
    -
    -
    -
    -
    7
    NPN
    AMPLIFIER
    7 NPN Darlington
    50V
    500mA
    1000 @ 350mA 2V
    1.6V @ 500μA, 350mA
    50V
    1.6V
    No
    RoHS Compliant
    Contains Lead
    -
    COMPLEX
    -
    95V
    100A
    50V
    -
    SG2003J-883B vs SG2003J
  • SG2023J-DESC
    SG2023J-DESC
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 2 weeks ago)
    10 Weeks
    Through Hole
    Through Hole
    16-CDIP (0.300, 7.62mm)
    16
    SILICON
    150°C TJ
    Tube
    1997
    e0
    no
    Active
    1 (Unlimited)
    16
    EAR99
    TIN LEAD
    CMOS COMPATIBLE
    DUAL
    -
    -
    -
    16
    -
    -
    7
    NPN
    AMPLIFIER
    7 NPN Darlington
    95V
    500mA
    1000 @ 350mA 2V
    1.6V @ 500μA, 350mA
    95V
    1.6V
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    Single
    SG2003J-883B vs SG2023J-DESC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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