Toshiba Semiconductor and Storage RN1610(TE85L,F)

Name: RN1610(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 2844566-RN1610(TE85L,F)
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RN1610(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 2844566-RN1610(TE85L,F)

Description:: TRANS 2NPN PREBIAS 0.3W SM6

ECAD Model:

Datasheet:: RN1610(TE85L,F)

Specifications

Toshiba Semiconductor and Storage RN1610(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1610(TE85L,F).

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
300mW
Reach Compliance Code
unknown
Number of Elements
2
Power - Max
300mW
Polarity/Channel Type
NPN
Transistor Type
2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
Resistor - Base (R1)
4.7k Ω
RoHS Status
RoHS Compliant

Description

RN1610(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1610(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1610(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

RN1610(TE85L,F) More Descriptions

TRANS 2NPN PREBIAS 0.3W SM6

Product Comparison

The three parts on the right have similar specifications to RN1610(TE85L,F).

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Reach Compliance Code

Number of Elements

Power - Max

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Frequency - Transition

Resistor - Base (R1)

RoHS Status

Resistor - Emitter Base (R2)

Polarity

Element Configuration

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

View Compare
RN1610(TE85L,F)

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SC-74, SOT-457

SILICON

Tape & Reel (TR)

2014

Active

1 (Unlimited)

BIP General Purpose Small Signal

300mW

unknown

2

300mW

NPN

2 NPN - Pre-Biased (Dual)

300mV

100mA

120 @ 1mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

50V

250MHz

4.7k Ω

RoHS Compliant

-

-

-

-

-

-

-
RN1673(TE85L,F)

Toshiba Semiconductor and Storage

-

Surface Mount

Surface Mount

SC-74, SOT-457

SILICON

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

BIP General Purpose Small Signal

300mW

unknown

2

300mW

NPN

2 NPN - Pre-Biased (Dual)

300mV

100mA

120 @ 1mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

50V

-

47k Ω

RoHS Compliant

-

-

-

-

-

-

RN1610(TE85L,F) vs RN1673(TE85L,F)
RN1601(TE85L,F)

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SC-74, SOT-457

SILICON

Tape & Reel (TR)

2014

Active

1 (Unlimited)

BIP General Purpose Small Signal

300mW

unknown

2

300mW

NPN

2 NPN - Pre-Biased (Dual)

300mV

100mA

30 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

50V

250MHz

4.7k Ω

RoHS Compliant

4.7k Ω

-

-

-

-

-

RN1610(TE85L,F) vs RN1601(TE85L,F)
RN1605TE85LF

Toshiba Semiconductor and Storage

11 Weeks

Surface Mount

Surface Mount

SC-74, SOT-457

SILICON

Cut Tape (CT)

2014

Active

1 (Unlimited)

BIP General Purpose Small Signal

300mW

-

2

-

-

2 NPN - Pre-Biased (Dual)

300mV

100mA

80 @ 10mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

50V

250MHz

2.2k Ω

RoHS Compliant

47k Ω

NPN

Dual

5V

80

100mA

RN1610(TE85L,F) vs RN1605TE85LF