Infineon Technologies PXAC201602FCV1R0XTMA1

Name: PXAC201602FCV1R0XTMA1
Brand: Infineon Technologies
SKU: 2477553-PXAC201602FCV1R0XTMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: PXAC201602FCV1R0XTMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2477553-PXAC201602FCV1R0XTMA1

Description:: IC AMP RF LDMOS H-37248-4

ECAD Model:

Datasheet:: PXAC201602FCV1R0XTMA1

Specifications

Infineon Technologies PXAC201602FCV1R0XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PXAC201602FCV1R0XTMA1.

Factory Lead Time
12 Weeks
Published
2016
Part Status
Active
ECCN Code
EAR99
Voltage - Rated
65V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
2.02GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Current - Test
360mA
Gain
17.7 dB
Power - Output
22.5W
Voltage - Test
28V
RoHS Status
RoHS Compliant

Description

PXAC201602FCV1R0XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PXAC201602FCV1R0XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PXAC201602FCV1R0XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

PXAC201602FCV1R0XTMA1 More Descriptions

IC AMP RF LDMOS H-37248-4
High Power RF LDMOS FET, 140 W, 28 V, 1880 1920 MHz, 2010 2025 MHz | Summary of Features: Asymmetric Doherty design - Main: 55 W Typ (P1dB) - Peak: 85 W Typ (P1dB); Broadband internal matching; Pulsed CW performance, 1960 MHz, 28 V - Output power at P1dB = 100 W - Gain = 18 dB - Efficiency = 55%; 1-carrier WCDMA performance, 1900 MHz, 28 V - Average output power = 43.5 dBm - Gain = 18.5 dB - Efficiency = 49%; Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power; Integrated ESD protection, Human Body Model Class 1C (per JESD22-A114); Low thermal resistance; Pb-free and RoHS compliant

Certification