PTFA220121MV4R1KXUMA1

Infineon Technologies PTFA220121MV4R1KXUMA1

Part Number:
PTFA220121MV4R1KXUMA1
Manufacturer:
Infineon Technologies
Ventron No:
2477521-PTFA220121MV4R1KXUMA1
Description:
RF MOSFET TRANSISTORS
ECAD Model:
Datasheet:
PTFA220121MV4R1KXUMA1

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Specifications
Infineon Technologies PTFA220121MV4R1KXUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFA220121MV4R1KXUMA1.
  • Factory Lead Time
    12 Weeks
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Published
    2009
  • Pbfree Code
    yes
  • Part Status
    Active
  • Number of Terminations
    10
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • JESD-30 Code
    R-PDSO-N10
  • Operating Temperature (Max)
    200°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    65V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    S B
  • RoHS Status
    Non-RoHS Compliant
Description
PTFA220121MV4R1KXUMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFA220121MV4R1KXUMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFA220121MV4R1KXUMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFA220121MV4R1KXUMA1 More Descriptions
LDMOS FET, High Power RF, 12W, 28V, 700-2200MHz, PG-SON-10 Pkg, T/R 1k
RF MOSFET Transistors RFP-LDMOS GOLDMOS 8
High Power RF LDMOS FET, 12 W, 28 V, 700 - 2200 MHz | Summary of Features: Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - P OUT = 33 dBm Avg - ACPR = 45.5 dBc Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR - P OUT = 33 dBm Avg - ACPR = 44.5 dBc Typical CW performance, 2140 MHz, 28 V - P OUT = 41.6 dBm - Efficiency = 53.5% - Gain = 15.5 dB Typical CW performance, 877 MHz, 28 V - P OUT = 41.8 dBm - Efficiency = 60% - Gain = 19.9 dB Capable of handling 10:1 VSWR @ 28 V, 12 W (CW) output power Integrated ESD protection Excellent thermal stability Pb-free and RoHS compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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