Infineon Technologies PTFA190451EV4R250XTMA1
- Part Number:
- PTFA190451EV4R250XTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2477526-PTFA190451EV4R250XTMA1
- Description:
- IC FET RF LDMOS 45W H-36265-2
- ECAD Model:
-
- Datasheet:
- PTFA190451E,F
Infineon Technologies PTFA190451EV4R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFA190451EV4R250XTMA1.
- Package / CaseH-36265-2
- Number of Pins3
- Supplier Device PackageH-36265-2
- PackagingTape & Reel (TR)
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated65V
- Current Rating (Amps)10μA
- Current Rating10μA
- Frequency1.96GHz
- Base Part NumberPTFA190451
- Current - Test450mA
- Transistor TypeLDMOS
- Gain17.5dB
- Power - Output11W
- Voltage - Test28V
- RoHS StatusRoHS Compliant
PTFA190451EV4R250XTMA1 Description
The 45-watt, internally matched, thermally enhanced LDMOS FET PTFA190451EV4R250XTMA1 is made for WCDMA, TD-SCDMA, and other cellular technologies in the 1930 to 1990 MHz frequency range. These gadgets come in ear- or earless-flanged thermally-enhanced packaging. These devices are produced using Infineon's cutting-edge LDMOS technology, and they offer outstanding thermal performance and high reliability.
PTFA190451EV4R250XTMA1 Features
Integrated ESD protection: Human Body Model, Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
Pb-free and RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at 1960 MHz, 28 V
- Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion = –39 dBc - Adjacent channel power = –42 dBc Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W - Efficiency = 60%
PTFA190451EV4R250XTMA1 Applications
Low Noise Amplifier
Buffer Amplifier
Cascode Amplifier
Analog Switch
Chopper Amplifier
Multiplexer
Current Limiter
Phase Shift Oscillators
The 45-watt, internally matched, thermally enhanced LDMOS FET PTFA190451EV4R250XTMA1 is made for WCDMA, TD-SCDMA, and other cellular technologies in the 1930 to 1990 MHz frequency range. These gadgets come in ear- or earless-flanged thermally-enhanced packaging. These devices are produced using Infineon's cutting-edge LDMOS technology, and they offer outstanding thermal performance and high reliability.
PTFA190451EV4R250XTMA1 Features
Integrated ESD protection: Human Body Model, Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
Pb-free and RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at 1960 MHz, 28 V
- Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion = –39 dBc - Adjacent channel power = –42 dBc Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W - Efficiency = 60%
PTFA190451EV4R250XTMA1 Applications
Low Noise Amplifier
Buffer Amplifier
Cascode Amplifier
Analog Switch
Chopper Amplifier
Multiplexer
Current Limiter
Phase Shift Oscillators
PTFA190451EV4R250XTMA1 More Descriptions
Trans MOSFET N-CH 65V 3-Pin H-36265-2 Tray
IC FET RF LDMOS 45W H-36265-2
D-Sub, D-Shaped Connectors - Backshells, Hoods 1 (Unlimited) 14 Weeks 9 Two Piece Backshell 180° Acrylonitrile Butadiene Styrene (ABS) Round Unshielded Black CONN BACKSHELL 9POS 180DEG BLACK
IC FET RF LDMOS 45W H-36265-2
D-Sub, D-Shaped Connectors - Backshells, Hoods 1 (Unlimited) 14 Weeks 9 Two Piece Backshell 180° Acrylonitrile Butadiene Styrene (ABS) Round Unshielded Black CONN BACKSHELL 9POS 180DEG BLACK
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can... -
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6... -
20 September 2023
ATMEGA8-16PU Microcontroller: Symbol, Equivalent and Electrical Characteristics
Ⅰ. Overview of ATMEGA8-16PUⅡ. Symbol, Footprint and Pin Configuration of ATMEGA8-16PUⅢ. Technical parametersⅣ. Electrical characteristics of ATMEGA8-16PUⅤ. What is the difference between ATMEGA8-16PU and ATMEGA8-16PI?Ⅵ. I/O Memory of... -
20 September 2023
The Pinout, Advantages, and Electrical Characteristics of AO4466
Ⅰ. What is AO4466?Ⅱ. Symbol, Pinout and Footprint of AO4466Ⅲ. Technical parametersⅣ. What are the advantages of AO4466?Ⅴ. Application fields of AO4466Ⅵ. Typical electrical characteristicsⅦ. How to detect...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.