Fairchild/ON Semiconductor PN3568
- Part Number:
- PN3568
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467730-PN3568
- Description:
- TRANS NPN 60V 1A TO-92
- Datasheet:
- PN3568
Fairchild/ON Semiconductor PN3568 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN3568.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Weight201mg
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- Max Power Dissipation625mW
- Current Rating1A
- Base Part NumberPN3568
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Power - Max625mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)1A
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
PN3568 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 15mA, 150mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The product comes in the supplier device package of TO-92-3.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1A volts at its maximum.
PN3568 Features
the DC current gain for this device is 40 @ 150mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3
PN3568 Applications
There are a lot of ON Semiconductor
PN3568 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 15mA, 150mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The product comes in the supplier device package of TO-92-3.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1A volts at its maximum.
PN3568 Features
the DC current gain for this device is 40 @ 150mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3
PN3568 Applications
There are a lot of ON Semiconductor
PN3568 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN3568 More Descriptions
Bipolar Transistors - BJT NPN Transistor General Purpose
@TRANSISTOR,GP,NPN,3PIN,TO-92, 60V,1AMP,GENERAL PURPOSE
NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA.
Chip Resistor - Surface Mount 84.5kOhms 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) RC RES SMD 84.5K OHM 1% 1/10W 0603
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:60V; DC Collector Current:1A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, RF; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:120; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:250mV; Current Ic Continuous a Max:1A; Hfe Min:40; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole
@TRANSISTOR,GP,NPN,3PIN,TO-92, 60V,1AMP,GENERAL PURPOSE
NPN General Purpose Amplifier This device is designed for general purpose, medium power amplifiers and switches requiring collector currents to 500 mA.
Chip Resistor - Surface Mount 84.5kOhms 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) RC RES SMD 84.5K OHM 1% 1/10W 0603
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:60V; DC Collector Current:1A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, RF; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:120; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:250mV; Current Ic Continuous a Max:1A; Hfe Min:40; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole
The three parts on the right have similar specifications to PN3568.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeView Compare
-
PN3568Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3201mg-55°C~150°C TJBulkObsolete1 (Unlimited)150°C-55°C60V625mW1APN35681NPNSingle625mW625mWNPN60V1A40 @ 150mA 1V50nA ICBO250mV @ 15mA, 150mA60V60V1A250mV80V5V405.33mm5.2mm4.19mmNo SVHCRoHS CompliantLead Free-
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)-----PN3565----625mWNPN--150 @ 1mA 10V50nA ICBO350mV @ 100μA, 1mA-25V500mA----------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3--55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)-----PN3568----625mWNPN--40 @ 150mA 1V50nA ICBO250mV @ 15mA, 150mA-60V1A----------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)----------625mWNPN--40 @ 150mA 1V50nA ICBO250mV @ 15mA, 150mA-40V600mA----------
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