Nexperia USA Inc. PMBT4403,215
- Part Number:
- PMBT4403,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464120-PMBT4403,215
- Description:
- TRANS PNP 40V 0.6A SOT23
- Datasheet:
- PMBT4403,215
Nexperia USA Inc. PMBT4403,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMBT4403,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.75
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberPMBT4403
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency200MHz
- Frequency - Transition200MHz
- Turn On Time-Max (ton)40ns
- RoHS StatusROHS3 Compliant
PMBT4403,215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.A transition frequency of 200MHz is present in the part.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
PMBT4403,215 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
a transition frequency of 200MHz
PMBT4403,215 Applications
There are a lot of Nexperia USA Inc.
PMBT4403,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.A transition frequency of 200MHz is present in the part.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
PMBT4403,215 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
a transition frequency of 200MHz
PMBT4403,215 Applications
There are a lot of Nexperia USA Inc.
PMBT4403,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PMBT4403,215 More Descriptions
Transistor General Purpose BJT PNP 40 Volt 0.6A Automotive 3-Pin TO-236AB
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
PMBT4403 Series 40 V 600 mA Surface Mount PNP Switching Transistor - SOT-23
PMBT4403 - PNP switching transistor
50nA 40V 250mW 600mA 100@150mA,2V 200MHz 750mV@500mA,50mA PNP 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Switching Transistor, Pnp, -40V, -600Ma, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; Product Range:-Rohs Compliant: Yes |Nexperia PMBT4403,215.
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Power Dissipation Pd:250mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
PMBT4403 Series 40 V 600 mA Surface Mount PNP Switching Transistor - SOT-23
PMBT4403 - PNP switching transistor
50nA 40V 250mW 600mA 100@150mA,2V 200MHz 750mV@500mA,50mA PNP 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Switching Transistor, Pnp, -40V, -600Ma, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; Product Range:-Rohs Compliant: Yes |Nexperia PMBT4403,215.
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Power Dissipation Pd:250mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
The three parts on the right have similar specifications to PMBT4403,215.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormBase Part NumberPin CountNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionTurn On Time-Max (ton)RoHS StatusMountSeriesMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTurn Off Time-Max (toff)FrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningView Compare
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PMBT4403,2154 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)1996e3Active1 (Unlimited)3EAR99Tin (Sn)8541.21.00.75DUALGULL WINGPMBT440331SINGLE250mWSWITCHINGPNPPNP100 @ 150mA 2V50nA ICBO750mV @ 50mA, 500mA40V600mA200MHz200MHz40nsROHS3 Compliant-------------------
-
4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3--SILICON150°C TJTape & Reel (TR)2015-Active1 (Unlimited)6---DUALGULL WING-62SEPARATE, 2 ELEMENTS250mWSWITCHINGNPNNPN80 @ 10mA 1V50nA ICBO750mV @ 50mA, 500mA--250MHz250MHz35nsROHS3 CompliantSurface MountAutomotive, AEC-Q101250mWNOT SPECIFIEDNOT SPECIFIEDAEC-Q101; IEC-60134R-PDSO-G6750mV600mA40V250ns-------
-
4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)8541.21.00.75DUALGULL WINGPMBT390431SINGLE250mWSWITCHINGNPNNPN100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V200mA300MHz300MHz70nsROHS3 Compliant-Automotive, AEC-Q101-26030-----250ns-------
-
4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)-DUALGULL WINGPMBT236931--SWITCHINGNPNNPN40 @ 10mA 1V400nA ICBO250mV @ 1mA, 10mA--500MHz-20nsROHS3 CompliantSurface MountAutomotive, AEC-Q101250mW26040--15V200mA15V-500MHzSingle250mW500MHz40V5VNo
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