Nexperia USA Inc. PEMD3,115
- Part Number:
- PEMD3,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2461892-PEMD3,115
- Description:
- TRANS PREBIAS NPN/PNP SOT666
- Datasheet:
- PEMD3,115
Nexperia USA Inc. PEMD3,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PEMD3,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- Weight4.535924g
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- Max Power Dissipation300mW
- Terminal FormFLAT
- Base Part NumberP*MD3
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage150mV
- Max Breakdown Voltage50V
- Emitter Base Voltage (VEBO)10V
- hFE Min30
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- Height600μm
- Length1.7mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PEMD3,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMD3,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMD3,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PEMD3,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PEMD3,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PEMD3,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PEMD3 Series 50 V 100 mA NPN/PNP Resistor-Equipped Transistor - SOT-666
Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive 6-Pin SOT-666 T/R
PEMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage, V(br)ceo:50V; Continuous Collector Current, Ic:100mA; Base Input Resistor, R1:10kohm; Base-Emitter Resistor, R2:10kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes
TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:30; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:30; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
PEMD3 Series 50 V 100 mA NPN/PNP Resistor-Equipped Transistor - SOT-666
Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive 6-Pin SOT-666 T/R
PEMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage, V(br)ceo:50V; Continuous Collector Current, Ic:100mA; Base Input Resistor, R1:10kohm; Base-Emitter Resistor, R2:10kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes
TRANS NPN/PNP 50V 0.1A SOT666; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:30; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Current Ic Continuous a Max:10mA; Hfe Min:30; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to PEMD3,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormBase Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Resistor - Emitter Base (R2)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Transition FrequencyPolarity/Channel TypeView Compare
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PEMD3,1154 WeeksSurface MountSurface MountSOT-563, SOT-66664.535924gTape & Reel (TR)2005e3Active1 (Unlimited)6SMD/SMTEAR99Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 1300mWFLATP*MD362NPN, PNPDual300mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA30 @ 5mA 5V1μA150mV @ 500μA, 10mA50V150mV50V10V3010k Ω10k Ω600μm1.7mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666-Tape & Reel (TR)2011-Active1 (Unlimited)----150°C-65°C-300mW----NPN, PNPDual--1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA30 @ 10mA 5V1μA150mV @ 500μA, 10mA50V----4.7kOhms4.7kOhms----NoROHS3 CompliantLead FreeSOT-666300mW50V100mA----
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4 WeeksSurface MountSurface MountSOT-563, SOT-66664.535924gTape & Reel (TR)2011e3Active1 (Unlimited)6SMD/SMTEAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTANCE RATIO IS 1300mWFLATP*MD4862NPN, PNPDual300mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 5V / 100 @ 10mA 5V1μA150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA50V150mV50V10V804.7k Ω, 22k Ω47k Ω600μm1.7mm1.3mmNo SVHCNoROHS3 Compliant-----26030230MHz-
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4 WeeksSurface MountSurface MountSOT-563, SOT-6666-Tape & Reel (TR)2006e3Active1 (Unlimited)6--Tin (Sn)150°C-65°C-300mWFLAT-62-Dual-SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)150mV100mA30 @ 20mA 5V1μA150mV @ 500μA, 10mA50V----2.2k Ω-----NoROHS3 Compliant--------NPN AND PNP
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