Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > P2N2907AZL1
P2N2907AZL1

ON Semiconductor P2N2907AZL1

Part Number:
P2N2907AZL1
Manufacturer:
ON Semiconductor
Ventron No:
3585610-P2N2907AZL1
Description:
TRANS PNP 60V 0.6A TO-92
ECAD Model:
Datasheet:
P2N2907A

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor P2N2907AZL1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor P2N2907AZL1.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Additional Feature
    EUROPEAN PART NUMBER
  • HTS Code
    8541.21.00.75
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    240
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    625mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Transition Frequency
    200MHz
  • Frequency - Transition
    200MHz
  • Turn Off Time-Max (toff)
    110ns
  • Turn On Time-Max (ton)
    50ns
  • RoHS Status
    Non-RoHS Compliant
Description
P2N2907AZL1 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 200MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

P2N2907AZL1 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz


P2N2907AZL1 Applications
There are a lot of Rochester Electronics, LLC
P2N2907AZL1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
P2N2907AZL1 More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 150mA 10V 600mA 625mW 200MHz
Transistor Silicon Plastic PNP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.