ON Semiconductor P2N2907A

Name: P2N2907A
Brand: ON Semiconductor
SKU: 3069555-P2N2907A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: P2N2907A

Manufacturer:: ON Semiconductor

Ventron No:: 3069555-P2N2907A

Description:: TRANS PNP 60V 0.6A TO-92

ECAD Model:

Datasheet:: P2N2907A

Specifications

ON Semiconductor P2N2907A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor P2N2907A.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
P2N2907
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
Power Dissipation-Max (Abs)
0.625W
Turn Off Time-Max (toff)
110ns
Turn On Time-Max (ton)
50ns
RoHS Status
Non-RoHS Compliant

Description

P2N2907A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 60V maximal voltage - Collector Emitter Breakdown.

P2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz

P2N2907A Applications
There are a lot of ON Semiconductor
P2N2907A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

P2N2907A More Descriptions

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Compliant Through Hole 75 PNP Contains Lead Bulk TO-92-3 -600 mA
Transistor Silicon Plastic PNP

Certification

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P2N2907A Specification

Part Number	Manufacturers	Description	Stock	Price
P2N2907A DISTI #P2N2907A-ND	ON Semiconductor	TRANS PNP 60V 0.6A TO-92 RoHS: Not Compliant	0
P2N2907AG DISTI #P2N2907AG-ND	ON Semiconductor	TRANS PNP 60V 0.6A TO-92 RoHS: Compliant	0
P2N2907ARL1 DISTI #P2N2907ARL1-ND	ON Semiconductor	TRANS PNP 60V 0.6A TO-92 RoHS: Not Compliant	0
P2N2907ARL1G DISTI #P2N2907ARL1G-ND	ON Semiconductor	TRANS PNP 60V 0.6A TO-92 RoHS: Compliant	0
P2N2907AZL1 DISTI #P2N2907AZL1-ND	ON Semiconductor	TRANS PNP 60V 0.6A TO-92 RoHS: Not Compliant	0
P2N2907AZL1G DISTI #P2N2907AZL1G-ND	ON Semiconductor	TRANS PNP 60V 0.6A TO-92 RoHS: Compliant	0
JANSP2N2907A/TR DISTI #JANSP2N2907A/TR	Microchip Technology Inc	Trans GP BJT PNP 60V 600mA 3-Pin TO-18 T/R - Tape RoHS: Not Compliant	0
JANSP2N2907AL/TR DISTI #JANSP2N2907AL/TR	Microchip Technology Inc	Trans GP BJT PNP 60V 600mA 3-Pin TO-18 T/R - Tape RoHS: Not Compliant	0
JANSP2N2907AUB/TR DISTI #JANSP2N2907AUB/TR	Microchip Technology Inc	Trans GP BJT PNP 60V 600mA 3-Pin SMD T/R - Tape an RoHS: Not Compliant	0
JANSP2N2907AUA/TR DISTI #JANSP2N2907AUA/TR	Microchip Technology Inc	Trans GP BJT PNP 60V 600mA 4-Pin SMD T/R - Tape an RoHS: Not Compliant	0
P2N2907A DISTI #863-P2N2907A	ON Semiconductor	Bipolar Transistors - BJT 600mA 60V PNP RoHS: Not Compliant	0
P2N2907AG DISTI #863-P2N2907AG	ON Semiconductor	Bipolar Transistors - BJT 600mA 60V PNP RoHS: Compliant	0
P2N2907ARL1G DISTI #863-P2N2907ARL1G	ON Semiconductor	Bipolar Transistors - BJT 600mA 60V PNP RoHS: Compliant	0
P2N2907AZL1G DISTI #863-P2N2907AZL1G	ON Semiconductor	Bipolar Transistors - BJT 600mA 60V PNP RoHS: Compliant	0
P2N2907AZL1 DISTI #863-P2N2907AZL1	ON Semiconductor	Bipolar Transistors - BJT 600mA 60V PNP RoHS: Not Compliant	0
P2N2907ARL1 DISTI #863-P2N2907ARL1	ON Semiconductor	Bipolar Transistors - BJT 600mA 60V PNP RoHS: Not Compliant	0
P2N2907AZL1G DISTI #	ON Semiconductor	Small Signal Bipolar Transistor, 0.6A I(C), 60V V( RoHS: Compliant	3750	1 $0.05 25 $0.05 100 $0.04 500 $0.04 1000 $0.04
P2N2907AZL1 DISTI #	ON Semiconductor	Small Signal Bipolar Transistor, 0.6A I(C), 60V V( RoHS: Not Compliant	8000	1 $0.05 25 $0.05 100 $0.04 500 $0.04 1000 $0.04
P2N2907ARL1 DISTI #	ON Semiconductor		103000

P2N2907~~(6)~~
P2N290~~(6)~~
P2N29~~(6)~~
P2N2~~(34)~~
P2N~~(487)~~

ON Semiconductor P2N2907A

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