NX3008NBKV,115

Nexperia USA Inc. NX3008NBKV,115

Part Number:
NX3008NBKV,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3069684-NX3008NBKV,115
Description:
MOSFET 2N-CH 30V 0.4A SOT666
ECAD Model:
Datasheet:
NX3008NBKV,115

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Specifications
Nexperia USA Inc. NX3008NBKV,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX3008NBKV,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchMOS™
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Terminal Form
    FLAT
  • Pin Count
    6
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PDSO-F6
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power - Max
    500mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.4 Ω @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    400mA
  • Gate Charge (Qg) (Max) @ Vgs
    0.68nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drain Current-Max (Abs) (ID)
    0.4A
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    0.39W
  • FET Feature
    Logic Level Gate
  • RoHS Status
    ROHS3 Compliant
Description
Description:

The Nexperia NX3008NBKV,115 is a MOSFET array in a SOT666 package. It is a N-channel device with a maximum drain-source voltage of 30V and a maximum drain current of 400mA. It is designed for use in low-voltage, low-power applications.

Features:

• N-channel MOSFET array
• Maximum drain-source voltage of 30V
• Maximum drain current of 400mA
• Low-voltage, low-power applications
• SOT666 package

Applications:

The Nexperia NX3008NBKV,115 is suitable for use in a variety of low-voltage, low-power applications, such as power management, motor control, and switching applications. It is also suitable for use in consumer electronics, automotive, and industrial applications.
NX3008NBKV,115 More Descriptions
Transistor MOSFET Array Dual N-CH 30V 400mA 6-Pin SOT-666 T/RAvnet Japan
NX3008NBKV - 30 V, 400 mA dual N-channel Trench MOSFET
MOSFET,NN CH, 30V, 400MA, SOT666; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 400mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900m
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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