Nexperia USA Inc. NX3008NBKV,115
- Part Number:
- NX3008NBKV,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3069684-NX3008NBKV,115
- Description:
- MOSFET 2N-CH 30V 0.4A SOT666
- Datasheet:
- NX3008NBKV,115
Nexperia USA Inc. NX3008NBKV,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX3008NBKV,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormFLAT
- Pin Count6
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeR-PDSO-F6
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max500mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4 Ω @ 350mA, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 15V
- Current - Continuous Drain (Id) @ 25°C400mA
- Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drain Current-Max (Abs) (ID)0.4A
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)0.39W
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
Description:
The Nexperia NX3008NBKV,115 is a MOSFET array in a SOT666 package. It is a N-channel device with a maximum drain-source voltage of 30V and a maximum drain current of 400mA. It is designed for use in low-voltage, low-power applications.
Features:
• N-channel MOSFET array
• Maximum drain-source voltage of 30V
• Maximum drain current of 400mA
• Low-voltage, low-power applications
• SOT666 package
Applications:
The Nexperia NX3008NBKV,115 is suitable for use in a variety of low-voltage, low-power applications, such as power management, motor control, and switching applications. It is also suitable for use in consumer electronics, automotive, and industrial applications.
The Nexperia NX3008NBKV,115 is a MOSFET array in a SOT666 package. It is a N-channel device with a maximum drain-source voltage of 30V and a maximum drain current of 400mA. It is designed for use in low-voltage, low-power applications.
Features:
• N-channel MOSFET array
• Maximum drain-source voltage of 30V
• Maximum drain current of 400mA
• Low-voltage, low-power applications
• SOT666 package
Applications:
The Nexperia NX3008NBKV,115 is suitable for use in a variety of low-voltage, low-power applications, such as power management, motor control, and switching applications. It is also suitable for use in consumer electronics, automotive, and industrial applications.
NX3008NBKV,115 More Descriptions
Transistor MOSFET Array Dual N-CH 30V 400mA 6-Pin SOT-666 T/RAvnet Japan
NX3008NBKV - 30 V, 400 mA dual N-channel Trench MOSFET
MOSFET,NN CH, 30V, 400MA, SOT666; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 400mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900m
NX3008NBKV - 30 V, 400 mA dual N-channel Trench MOSFET
MOSFET,NN CH, 30V, 400MA, SOT666; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 400mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900m
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