ON Semiconductor NUS2401SNT1G
- Part Number:
- NUS2401SNT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462075-NUS2401SNT1G
- Description:
- TRANS 2NPN/1PNP PREBIAS SC74
- ECAD Model:
-
- Datasheet:
- NUS2401SNT1G
ON Semiconductor NUS2401SNT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NUS2401SNT1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTORS
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNUS2401
- Pin Count6
- Number of Elements3
- PolarityPNP
- ConfigurationCOMPLEX
- Power Dissipation350mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type2 NPN, 1 PNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current200mA
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA / 250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min150
- DC Current Gain-Min (hFE)150
- Resistor - Base (R1)175 Ω, 10k Ω
- Continuous Collector Current200mA
- Resistor - Emitter Base (R2)175 Ω, 10k Ω
- Height1mm
- Length3.1mm
- Width1.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NUS2401SNT1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NUS2401SNT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NUS2401SNT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NUS2401SNT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NUS2401SNT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NUS2401SNT1G More Descriptions
Bipolar Digital Transistor, NPN / PNP, Integrated
Trans Digital BJT NPN/PNP 50V 200mA 6-Pin SC-74 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 3-Element, NPN and PNP, Silicon
ON Semi NUS2401SNT1G 3 NPN PNP Bipolar Transistor, 0.2 A, 50 V, 6-Pin SC-74 | ON Semiconductor NUS2401SNT1G
Bipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
This new option of Integrated Digital Transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs (Bias Resistor Transistors) contain a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT technolgy eliminates these individual components by integrating them into a single device therefore the integration of three BRTs results in a significant reduction of both system cost and board space. This new device is packaged in the SC-74/Case 318F package which is designed for low power surface mount applications.
Trans Digital BJT NPN/PNP 50V 200mA 6-Pin SC-74 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 3-Element, NPN and PNP, Silicon
ON Semi NUS2401SNT1G 3 NPN PNP Bipolar Transistor, 0.2 A, 50 V, 6-Pin SC-74 | ON Semiconductor NUS2401SNT1G
Bipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
This new option of Integrated Digital Transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs (Bias Resistor Transistors) contain a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT technolgy eliminates these individual components by integrating them into a single device therefore the integration of three BRTs results in a significant reduction of both system cost and board space. This new device is packaged in the SC-74/Case 318F package which is designed for low power surface mount applications.
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