ON Semiconductor NSVMUN5312DW1T2G
- Part Number:
- NSVMUN5312DW1T2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462057-NSVMUN5312DW1T2G
- Description:
- TRANS NPN/PNP 50V BIPO SC88-6
- ECAD Model:
-
- Datasheet:
- NSVMUN5312DW1T2G
ON Semiconductor NSVMUN5312DW1T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMUN5312DW1T2G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Reference StandardAEC-Q101
- JESD-30 CodeR-PDSO-G6
- Operating Temperature (Max)150°C
- Operating Temperature (Min)-55°C
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN AND PNP
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Resistor - Base (R1)22k Ω
- Resistor - Emitter Base (R2)22k Ω
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSVMUN5312DW1T2G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVMUN5312DW1T2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVMUN5312DW1T2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVMUN5312DW1T2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVMUN5312DW1T2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSVMUN5312DW1T2G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
50 V 100 mA 250mW 1 NPN 1 PNP SMT Pre-Biased Bipolar Transistor - SOT-363
Complementary Bipolar Digital Transistor (BRT)
Rf Transistor, Compl, 50V, 0.1A, Sot-363; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi NSVMUN5312DW1T2G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
50 V 100 mA 250mW 1 NPN 1 PNP SMT Pre-Biased Bipolar Transistor - SOT-363
Complementary Bipolar Digital Transistor (BRT)
Rf Transistor, Compl, 50V, 0.1A, Sot-363; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi NSVMUN5312DW1T2G
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