ON Semiconductor NSVBC818-40LT1G
- Part Number:
- NSVBC818-40LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845979-NSVBC818-40LT1G
- Description:
- TRANS NPN 25V 0.5A SOT23
- ECAD Model:
-
- Datasheet:
- NSVBC818-40LT1G
ON Semiconductor NSVBC818-40LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVBC818-40LT1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation225mW
- Frequency100MHz
- Number of Elements1
- Power Dissipation300mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage25V
- Current - Collector (Ic) (Max)500mA
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSVBC818-40LT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 500mA volts is possible.
NSVBC818-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
NSVBC818-40LT1G Applications
There are a lot of ON Semiconductor
NSVBC818-40LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 500mA volts is possible.
NSVBC818-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
NSVBC818-40LT1G Applications
There are a lot of ON Semiconductor
NSVBC818-40LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSVBC818-40LT1G More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Trans GP NPN 25V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
25V 225mW 500mA 250@100mA1V 100MHz NPN 700mV@500mA50mA -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Trans GP NPN 25V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
25V 225mW 500mA 250@100mA1V 100MHz NPN 700mV@500mA50mA -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
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