ON Semiconductor NSVB143TPDXV6T1G
- Part Number:
- NSVB143TPDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462060-NSVB143TPDXV6T1G
- Description:
- TRANS NPN/PNP PREBIAS SOT563
- ECAD Model:
-
- Datasheet:
- NSVB143TPDXV6T1G
ON Semiconductor NSVB143TPDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVB143TPDXV6T1G.
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2014
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation357mW
- Terminal FormFLAT
- Pin Count6
- Reference StandardAEC-Q101
- Number of Elements2
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN AND PNP
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min160
- Resistor - Base (R1)4.7k Ω
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NSVB143TPDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVB143TPDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVB143TPDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVB143TPDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVB143TPDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSVB143TPDXV6T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
Complementary Bipolar Digital Transistor (BRT)
Tape & Reel (TR) Surface Mount NPN AND PNP Dual Pre-Biased Bipolar Transistor (BJT) 160 @ 5mA 10V 500nA 357mW 50V
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
Complementary Bipolar Digital Transistor (BRT)
Tape & Reel (TR) Surface Mount NPN AND PNP Dual Pre-Biased Bipolar Transistor (BJT) 160 @ 5mA 10V 500nA 357mW 50V
The three parts on the right have similar specifications to NSVB143TPDXV6T1G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryMax Power DissipationTerminal FormPin CountReference StandardNumber of ElementsElement ConfigurationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Radiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeMountJESD-609 CodeTerminal FinishPower - MaxResistor - Emitter Base (R2)Transistor Element MaterialPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationView Compare
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NSVB143TPDXV6T1GSurface MountSOT-563, SOT-666YES6Tape & Reel (TR)2014yesObsolete1 (Unlimited)6EAR99150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signal357mWFLAT6AEC-Q1012DualSWITCHINGNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA160 @ 5mA 10V500nA250mV @ 300μA, 10mA50V1604.7k ΩNoRoHS CompliantLead Free------------- -
Surface MountSOT-563, SOT-666--Tape & Reel (TR)2012yesActive1 (Unlimited)-EAR99----500mW-------2 PNP - Pre-Biased (Dual)250mV100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-10k Ω-ROHS3 CompliantLead FreeACTIVE (Last Updated: 2 weeks ago)17 WeeksSurface Mounte3Tin (Sn)500mW10k Ω-----
-
Surface MountSOT-563, SOT-666-6Tape & Reel (TR)2012yesActive1 (Unlimited)-EAR99150°C-55°C--500mW-6--Dual--2 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-10k ΩNoROHS3 CompliantLead FreeACTIVE (Last Updated: 1 week ago)17 WeeksSurface Mounte3Tin (Sn)-47k Ω-----
-
Surface MountSOT-563, SOT-666--Tape & Reel (TR)2012yesActive1 (Unlimited)6---BUILT IN BIAS RESISTANCE RATIO IS 1BIP General Purpose Small Signal500mWFLAT-AEC-Q1012-SWITCHINGNPN AND PNP1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-10k Ω-ROHS3 CompliantLead FreeACTIVE (Last Updated: 2 weeks ago)2 WeeksSurface Mounte3Tin (Sn)500mW10k ΩSILICONNOT SPECIFIEDNOT SPECIFIEDR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
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