ON Semiconductor NSVBA114YDXV6T1G

Name: NSVBA114YDXV6T1G
Brand: ON Semiconductor
SKU: 3068510-NSVBA114YDXV6T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NSVBA114YDXV6T1G

Manufacturer:: ON Semiconductor

Ventron No:: 3068510-NSVBA114YDXV6T1G

Description:: TRANS 2PNP PREBIAS 0.5W SOT563

ECAD Model:

Datasheet:: NSVBA114YDXV6T1G

Specifications

ON Semiconductor NSVBA114YDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVBA114YDXV6T1G.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Pin Count
6
Element Configuration
Dual
Transistor Type
2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage
50V
Resistor - Base (R1)
10k Ω
Resistor - Emitter Base (R2)
47k Ω
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NSVBA114YDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVBA114YDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVBA114YDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

NSVBA114YDXV6T1G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Dual PNP Bipolar Digital Transistor (BRT)
Trans Digital BJT PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel

Product Comparison

The three parts on the right have similar specifications to NSVBA114YDXV6T1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Pin Count

Element Configuration

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Resistor - Base (R1)

Resistor - Emitter Base (R2)

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Surface Mount

Number of Terminations

Additional Feature

Subcategory

Terminal Form

Reference Standard

Number of Elements

Polarity

Transistor Application

hFE Min

Transistor Element Material

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Configuration

Polarity/Channel Type

View Compare
NSVBA114YDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

17 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

EAR99

Tin (Sn)

150°C

-55°C

500mW

6

Dual

2 PNP - Pre-Biased (Dual)

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

10k Ω

47k Ω

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NSVBA114EDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 2 weeks ago)

17 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

-

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

EAR99

Tin (Sn)

-

-

500mW

-

-

2 PNP - Pre-Biased (Dual)

250mV

100mA

35 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

10k Ω

10k Ω

-

ROHS3 Compliant

Lead Free

500mW

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NSVBA114YDXV6T1G vs NSVBA114EDXV6T1G
NSVBC114YDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

17 Weeks

-

Surface Mount

SOT-563, SOT-666

6

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

EAR99

Tin (Sn)

150°C

-55°C

500mW

6

Dual

2 NPN - Pre-Biased (Dual)

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

10k Ω

47k Ω

No

ROHS3 Compliant

Lead Free

-

YES

6

BUILT IN BIAS RESISTANCE RATIO IS 4.7

BIP General Purpose Small Signal

FLAT

AEC-Q101

2

NPN

SWITCHING

80

-

-

-

-

-

-

NSVBA114YDXV6T1G vs NSVBC114YDXV6T1G
NSVBC114EPDXV6T1G

ON Semiconductor

ACTIVE (Last Updated: 2 weeks ago)

2 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

-

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

-

Tin (Sn)

-

-

500mW

-

-

1 NPN, 1 PNP - Pre-Biased (Dual)

250mV

100mA

35 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

10k Ω

10k Ω

-

ROHS3 Compliant

Lead Free

500mW

-

6

BUILT IN BIAS RESISTANCE RATIO IS 1

BIP General Purpose Small Signal

FLAT

AEC-Q101

2

-

SWITCHING

-

SILICON

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-F6

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

NPN AND PNP

NSVBA114YDXV6T1G vs NSVBC114EPDXV6T1G