ON Semiconductor NSTB60BDW1T1G
- Part Number:
- NSTB60BDW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068473-NSTB60BDW1T1G
- Description:
- TRANS NPN PREBIAS/PNP 0.25W SC88
- ECAD Model:
-
- Datasheet:
- NSTB60BDW1T1G
ON Semiconductor NSTB60BDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSTB60BDW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 2.13
- SubcategoryOther Transistors
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating-1mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberNSTB60B
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation256mW
- Transistor Type1 NPN Pre-Biased, 1 PNP
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V / 120 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency140MHz
- Max Breakdown Voltage50V
- Frequency - Transition140MHz
- hFE Min80
- Resistor - Base (R1)22k Ω
- Continuous Collector Current-150mA
- Resistor - Emitter Base (R2)47k Ω
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSTB60BDW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSTB60BDW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSTB60BDW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSTB60BDW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSTB60BDW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSTB60BDW1T1G More Descriptions
PNP General Purpose and NPN Bias Resistor Transistor Combination
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 150mA 250mW 6-Pin SC-88 T/R
Transistor ARRAY, AEC-Q101, NPN/PNP, 50V; Digital Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
Brt Transistor, 50V, 22Kohm, Sot363, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:150Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSTB60BDW1T1G
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 150mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: NSTB60 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); DC Collector Current: 150mA; DC Current Gain hFE: 80hFE; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Power Dissipation Pd: 385mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 150mA 250mW 6-Pin SC-88 T/R
Transistor ARRAY, AEC-Q101, NPN/PNP, 50V; Digital Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
Brt Transistor, 50V, 22Kohm, Sot363, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:150Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSTB60BDW1T1G
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 150mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: NSTB60 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); DC Collector Current: 150mA; DC Current Gain hFE: 80hFE; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Power Dissipation Pd: 385mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP
The three parts on the right have similar specifications to NSTB60BDW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionhFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)REACH SVHCRoHS StatusLead FreeMountTransistor Element MaterialTerminal PositionJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transistor ApplicationTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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NSTB60BDW1T1GACTIVE (Last Updated: 5 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2002e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 2.13Other Transistors250mWGULL WINGNOT SPECIFIED-1mANOT SPECIFIEDNSTB60B6Not Qualified2NPN, PNPDual256mW1 NPN Pre-Biased, 1 PNP50V150mA80 @ 5mA 10V / 120 @ 5mA 10V500nA250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA50V140MHz50V140MHz8022k Ω-150mA47k ΩNo SVHCROHS3 CompliantLead Free------------- -
--Surface MountSOT-553--Tape & Reel (TR)---Obsolete1 (Unlimited)----------100mA--------1 NPN, 1 PNP - Pre-Biased (Dual)--------------RoHS CompliantLead FreeSurface Mount-----------
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--Surface Mount6-TSSOP, SC-88, SOT-363YES-Tape & Reel (TR)-e0yesObsolete1 (Unlimited)6-TIN LEAD--BUILT IN BIAS RESISTOR RATIO IS 2.13--GULL WING235-NOT SPECIFIED-6COMMERCIAL2---1 NPN Pre-Biased, 1 PNP--80 @ 5mA 10V / 120 @ 5mA 10V500nA250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA-140MHz-140MHz-22k Ω-47k Ω-Non-RoHS Compliant--SILICONDUALR-PDSO-G6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR250mWNPN AND PNP50V150mA---
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--Surface MountSOT-553--Tape & Reel (TR)2006e3-Obsolete1 (Unlimited)5EAR99Tin (Sn)--BUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal500mWFLAT260100mANOT SPECIFIED-5Not Qualified2---1 NPN Pre-Biased, 1 PNP250mV200mA80 @ 5mA 10V / 100 @ 1mA 10V500nA250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA40V250MHz-250MHz-47k Ω-47k Ω-Non-RoHS CompliantContains LeadSurface MountSILICONDUALR-PDSO-F5CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR-NPN AND PNP50V 40V100mA 200mASWITCHING300ns70ns
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