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NSTB1002DXV5T1G

ON Semiconductor NSTB1002DXV5T1G

Part Number:
NSTB1002DXV5T1G
Manufacturer:
ON Semiconductor
Ventron No:
3584920-NSTB1002DXV5T1G
Description:
TRANS NPN PREBIAS/PNP 0.5W SOT55
ECAD Model:
Datasheet:
NSTB1002DXV5T1G

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Specifications
ON Semiconductor NSTB1002DXV5T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSTB1002DXV5T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    17 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-553
  • Surface Mount
    YES
  • Number of Pins
    5
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    500mW
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    5
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Configuration
    CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power Dissipation
    357mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V / 100 @ 1mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    40V
  • Voltage - Collector Emitter Breakdown (Max)
    50V 40V
  • Current - Collector (Ic) (Max)
    100mA 200mA
  • Transition Frequency
    250MHz
  • Collector Emitter Saturation Voltage
    250mV
  • Frequency - Transition
    250MHz
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    250
  • Resistor - Base (R1)
    47k Ω
  • Continuous Collector Current
    -200mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Turn Off Time-Max (toff)
    300ns
  • Turn On Time-Max (ton)
    70ns
  • Height
    600μm
  • Length
    1.7mm
  • Width
    1.3mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSTB1002DXV5T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSTB1002DXV5T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSTB1002DXV5T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSTB1002DXV5T1G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA/200mA 500mW 5-Pin SOT-553 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 40V, 47K/47Kohm, Sot-553, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:40V; Collector Emitter Voltage Max Pnp:40V; Continuous Collector Current:100Ma; No. Of Pins:5 Pin Rohs Compliant: Yes |Onsemi NSTB1002DXV5T1G
Product Comparison
The three parts on the right have similar specifications to NSTB1002DXV5T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Emitter Saturation Voltage
    Frequency - Transition
    Emitter Base Voltage (VEBO)
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Mount
    Base Part Number
    Element Configuration
    Max Breakdown Voltage
    REACH SVHC
    Transistor Element Material
    JESD-30 Code
    Power - Max
    Polarity/Channel Type
    View Compare
  • NSTB1002DXV5T1G
    NSTB1002DXV5T1G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    17 Weeks
    Surface Mount
    SOT-553
    YES
    5
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    500mW
    DUAL
    FLAT
    NOT SPECIFIED
    100mA
    NOT SPECIFIED
    5
    Not Qualified
    2
    NPN, PNP
    CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
    357mW
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    250mV
    200mA
    80 @ 5mA 10V / 100 @ 1mA 10V
    500nA
    250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
    40V
    50V 40V
    100mA 200mA
    250MHz
    250mV
    250MHz
    6V
    250
    47k Ω
    -200mA
    47k Ω
    300ns
    70ns
    600μm
    1.7mm
    1.3mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSTB1003DXV5T1G
    NSTB1003DXV5T1G
    ON Semiconductor
    -
    -
    Surface Mount
    SOT-553
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100mA
    -
    -
    -
    -
    -
    -
    -
    -
    1 NPN, 1 PNP - Pre-Biased (Dual)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    NSTB1002DXV5T1G vs NSTB1003DXV5T1G
  • NSTB60BDW1T1G
    NSTB60BDW1T1G
    ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 2.13
    Other Transistors
    250mW
    -
    GULL WING
    NOT SPECIFIED
    -1mA
    NOT SPECIFIED
    6
    Not Qualified
    2
    NPN, PNP
    -
    256mW
    -
    1 NPN Pre-Biased, 1 PNP
    50V
    150mA
    80 @ 5mA 10V / 120 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
    50V
    -
    -
    140MHz
    -
    140MHz
    -
    80
    22k Ω
    -150mA
    47k Ω
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    NSTB60B
    Dual
    50V
    No SVHC
    -
    -
    -
    -
    NSTB1002DXV5T1G vs NSTB60BDW1T1G
  • NSTB60BDW1T1
    NSTB60BDW1T1
    ON Semiconductor
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    -
    Tape & Reel (TR)
    -
    e0
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    TIN LEAD
    -
    -
    BUILT IN BIAS RESISTOR RATIO IS 2.13
    -
    -
    DUAL
    GULL WING
    235
    -
    NOT SPECIFIED
    6
    COMMERCIAL
    2
    -
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    -
    -
    1 NPN Pre-Biased, 1 PNP
    -
    -
    80 @ 5mA 10V / 120 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
    -
    50V
    150mA
    140MHz
    -
    140MHz
    -
    -
    22k Ω
    -
    47k Ω
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    SILICON
    R-PDSO-G6
    250mW
    NPN AND PNP
    NSTB1002DXV5T1G vs NSTB60BDW1T1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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