ON Semiconductor NSBA123EDXV6T1
- Part Number:
- NSBA123EDXV6T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462145-NSBA123EDXV6T1
- Description:
- TRANS 2PNP PREBIAS 0.5W SOT563
- ECAD Model:
-
- Datasheet:
- NSBA114EDXV6T1,5 Series
ON Semiconductor NSBA123EDXV6T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBA123EDXV6T1.
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishMATTE TIN
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- JESD-30 CodeR-PDSO-F6
- Qualification StatusCOMMERCIAL
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor Type2 PNP - Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Resistor - Base (R1)2.2k Ω
- Resistor - Emitter Base (R2)2.2k Ω
- RoHS StatusROHS3 Compliant
NSBA123EDXV6T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA123EDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA123EDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA123EDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA123EDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBA123EDXV6T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Non-Compliant Surface Mount 8 PNP Contains Lead Tape & Reel (TR) SOT-563 -100 mA
SMALL SIGNAL BIPOLAR TRANSISTOR
TRANS 2PNP PREBIAS 0.5W SOT563
Non-Compliant Surface Mount 8 PNP Contains Lead Tape & Reel (TR) SOT-563 -100 mA
SMALL SIGNAL BIPOLAR TRANSISTOR
TRANS 2PNP PREBIAS 0.5W SOT563
The three parts on the right have similar specifications to NSBA123EDXV6T1.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusView Compare
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NSBA123EDXV6T1Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)e3yesObsolete1 (Unlimited)6MATTE TINBUILT IN BIAS RESISTOR RATIO IS 1FLAT260406R-PDSO-F6COMMERCIAL2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP2 PNP - Pre-Biased (Dual)8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V100mA2.2k Ω2.2k ΩROHS3 Compliant- -
Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)e3yesObsolete1 (Unlimited)6MATTE TINBUILT IN BIAS RESISTOR RATIO IS 0.047FLAT260406R-PDSO-F6COMMERCIAL2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP2 PNP - Pre-Biased (Dual)80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V100mA2.2k Ω47k ΩROHS3 Compliant
-
Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)e3yesObsolete1 (Unlimited)6MATTE TINBUILT IN BIAS RESISTORFLAT260406R-PDSO-F6COMMERCIAL2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP2 PNP - Pre-Biased (Dual)160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V100mA4.7k Ω-ROHS3 Compliant
-
Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)e3yesObsolete1 (Unlimited)6MATTE TINBUILT IN BIAS RESISTOR RATIO IS 1FLAT260406R-PDSO-F6COMMERCIAL2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP2 PNP - Pre-Biased (Dual)80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V100mA47k Ω47k ΩROHS3 Compliant
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