ON Semiconductor NSBA114EDXV6T1G
- Part Number:
- NSBA114EDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068483-NSBA114EDXV6T1G
- Description:
- TRANS 2PNP PREBIAS 0.5W SOT563
- ECAD Model:
-
- Datasheet:
- NSBA114EDXV6T1G
ON Semiconductor NSBA114EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBA114EDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSBA1*
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min35
- Resistor - Base (R1)10k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)10k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBA114EDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA114EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA114EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA114EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA114EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBA114EDXV6T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel
Dual PNP Bipolar Digital Transistor (BRT)
NSBA114EDXV6 Series 50 V 100 mA Dual PNP Bias Resistor Transistor - SOT-563
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 10K/10Kohm, Sot-563; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBA114EDXV6T1G
Trans Digital BJT PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel
Dual PNP Bipolar Digital Transistor (BRT)
NSBA114EDXV6 Series 50 V 100 mA Dual PNP Bias Resistor Transistor - SOT-563
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 10K/10Kohm, Sot-563; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBA114EDXV6T1G
The three parts on the right have similar specifications to NSBA114EDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeQualification StatusTransistor Element MaterialJESD-30 CodeConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NSBA114EDXV6T1GACTIVE (Last Updated: 4 days ago)2 WeeksSurface MountSOT-563, SOT-666YES6Tape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V500mWFLAT260-100mA40NSBA1*62PNPDual357mW2 PNP - Pre-Biased (Dual)50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V3510k Ω-100mA10k ΩNoROHS3 CompliantLead Free---------- -
ACTIVE (Last Updated: 1 week ago)4 WeeksSurface MountSOT-563, SOT-666YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V500mWFLATNOT SPECIFIED-100mANOT SPECIFIEDNSBA1*62PNPDual357mW2 PNP - Pre-Biased (Dual)250mV100mA8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V-82.2k Ω-100mA2.2k Ω-RoHS CompliantLead FreeNot Qualified--------
-
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 0.047---FLAT260-40-62---2 PNP - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 300μA, 10mA---2.2k Ω-47k Ω-ROHS3 Compliant-COMMERCIALSILICONR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP50V100mA
-
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 1---FLAT260-40-62---2 PNP - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 300μA, 10mA---47k Ω-47k Ω-ROHS3 Compliant-COMMERCIALSILICONR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWSWITCHINGPNP50V100mA
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