ON Semiconductor NSBA114EDP6T5G
- Part Number:
- NSBA114EDP6T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844637-NSBA114EDP6T5G
- Description:
- TRANS 2PNP PREBIAS 0.338W SOT963
- Datasheet:
- NSBA114EDP6T5G
ON Semiconductor NSBA114EDP6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBA114EDP6T5G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-963
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation338mW
- Terminal FormFLAT
- Base Part NumberNSBA1*
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min35
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBA114EDP6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA114EDP6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA114EDP6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBA114EDP6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBA114EDP6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBA114EDP6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Dual PNP Bipolar Digital Transistor (BRT)
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-963 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 10K/10Kohm, Sot-963; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBA114EDP6T5G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT963 package which is designed for low power surface mount applications.
Dual PNP Bipolar Digital Transistor (BRT)
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-963 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 10K/10Kohm, Sot-963; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBA114EDP6T5G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT963 package which is designed for low power surface mount applications.
The three parts on the right have similar specifications to NSBA114EDP6T5G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryMax Power DissipationTerminal FormBase Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Resistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeTransistor Element MaterialPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NSBA114EDP6T5GACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal338mWFLATNSBA1*62PNPDualSWITCHING2 PNP - Pre-Biased (Dual)50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V3510k Ω10k ΩNoROHS3 CompliantLead Free-----------
-
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 0.047--FLAT-62--SWITCHING2 PNP - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 300μA, 10mA--2.2k Ω47k Ω-ROHS3 Compliant-SILICON26040R-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWPNP50V100mA
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--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 1--FLAT-62--SWITCHING2 PNP - Pre-Biased (Dual)--60 @ 5mA 10V500nA250mV @ 300μA, 10mA--22k Ω22k Ω-ROHS3 Compliant-SILICON26040R-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWPNP50V100mA
-
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO IS 0.47--FLAT-62--SWITCHING2 PNP - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA--22k Ω47k Ω-ROHS3 Compliant-SILICON26040R-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWPNP50V100mA
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