NJVMJB44H11T4G

ON Semiconductor NJVMJB44H11T4G

Part Number:
NJVMJB44H11T4G
Manufacturer:
ON Semiconductor
Ventron No:
2466749-NJVMJB44H11T4G
Description:
TRANS NPN 80V 10A D2PAK-3
ECAD Model:
Datasheet:
NJVMJB44H11T4G

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Specifications
ON Semiconductor NJVMJB44H11T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJVMJB44H11T4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    2W
  • Frequency
    50MHz
  • Base Part Number
    MJB44H11
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 4A 1V
  • Current - Collector Cutoff (Max)
    10μA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 400mA, 8A
  • Collector Emitter Breakdown Voltage
    80V
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    10V
  • Emitter Base Voltage (VEBO)
    5V
  • Height
    4.83mm
  • Length
    10.29mm
  • Width
    11.05mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NJVMJB44H11T4G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.

NJVMJB44H11T4G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V


NJVMJB44H11T4G Applications
There are a lot of ON Semiconductor
NJVMJB44H11T4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NJVMJB44H11T4G More Descriptions
ON Semi NJVMJB44H11T4G NPN Bipolar Transistor; 10 A; 80 V; 3-Pin D2PAK
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2 Tab) D2PAK T/R
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
80V 2W 40@4A,1V 10A NPN D2PAK Bipolar Transistors - BJT ROHS
NJVMJB Series NPN 50 W 80 V 10 A Surface Mount Power Transistor - TO-263-3
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bip D2Pak Npn 8A 80V Tr/Reel Rohs Compliant: Yes |Onsemi NJVMJB44H11T4G
Transistor, AEC-Q101, NPN, 80V, TO-263; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power
Product Comparison
The three parts on the right have similar specifications to NJVMJB44H11T4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Frequency
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Collector Current-Max (IC)
    DC Current Gain-Min (hFE)
    Collector-Emitter Voltage-Max
    View Compare
  • NJVMJB44H11T4G
    NJVMJB44H11T4G
    ACTIVE (Last Updated: 6 days ago)
    4 Weeks
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    Other Transistors
    2W
    50MHz
    MJB44H11
    3
    1
    Single
    2W
    50MHz
    NPN
    NPN
    80V
    10A
    40 @ 4A 1V
    10μA
    1V @ 400mA, 8A
    80V
    1V
    10V
    5V
    4.83mm
    10.29mm
    11.05mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NJVMJD45H11T4G-VF01
    -
    22 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    yes
    Active
    1 (Unlimited)
    -
    Tin (Sn)
    -
    -
    -
    MJD45H11
    -
    1
    -
    -
    -
    PNP
    PNP
    -
    -
    40 @ 4A 1V
    1μA
    1V @ 400mA, 8A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    2
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    AEC-Q101
    R-PSSO-G2
    SINGLE
    COLLECTOR
    1.75W
    SWITCHING
    80V
    8A
    90MHz
    90MHz
    -
    -
    -
  • NJVMJD2955T4G
    ACTIVE (Last Updated: 6 days ago)
    2 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    Other Transistors
    1.75W
    2MHz
    MJD2955
    3
    1
    -
    1.75W
    -
    PNP
    PNP
    60V
    10A
    20 @ 4A 4V
    50μA
    8V @ 3.3A, 10A
    60V
    -
    70V
    5V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    -
    -
    -
    -
    10A
    2MHz
    -
    -
    -
    -
  • NJVMJD41CT4G-VF01
    -
    -
    -
    -
    YES
    -
    -
    Tape & Reel (TR)
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    1
    -
    -
    -
    NPN
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    2
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    AEC-Q101
    R-PSSO-G2
    SINGLE
    COLLECTOR
    -
    AMPLIFIER
    -
    -
    3MHz
    -
    6A
    15
    100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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