ON Semiconductor NJVMJB44H11T4G
- Part Number:
- NJVMJB44H11T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466749-NJVMJB44H11T4G
- Description:
- TRANS NPN 80V 10A D2PAK-3
- Datasheet:
- NJVMJB44H11T4G
ON Semiconductor NJVMJB44H11T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NJVMJB44H11T4G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Frequency50MHz
- Base Part NumberMJB44H11
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A 1V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage80V
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)10V
- Emitter Base Voltage (VEBO)5V
- Height4.83mm
- Length10.29mm
- Width11.05mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NJVMJB44H11T4G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.
NJVMJB44H11T4G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
NJVMJB44H11T4G Applications
There are a lot of ON Semiconductor
NJVMJB44H11T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.
NJVMJB44H11T4G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
NJVMJB44H11T4G Applications
There are a lot of ON Semiconductor
NJVMJB44H11T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NJVMJB44H11T4G More Descriptions
ON Semi NJVMJB44H11T4G NPN Bipolar Transistor; 10 A; 80 V; 3-Pin D2PAK
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2 Tab) D2PAK T/R
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
80V 2W 40@4A,1V 10A NPN D2PAK Bipolar Transistors - BJT ROHS
NJVMJB Series NPN 50 W 80 V 10 A Surface Mount Power Transistor - TO-263-3
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bip D2Pak Npn 8A 80V Tr/Reel Rohs Compliant: Yes |Onsemi NJVMJB44H11T4G
Transistor, AEC-Q101, NPN, 80V, TO-263; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2 Tab) D2PAK T/R
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
80V 2W 40@4A,1V 10A NPN D2PAK Bipolar Transistors - BJT ROHS
NJVMJB Series NPN 50 W 80 V 10 A Surface Mount Power Transistor - TO-263-3
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bip D2Pak Npn 8A 80V Tr/Reel Rohs Compliant: Yes |Onsemi NJVMJB44H11T4G
Transistor, AEC-Q101, NPN, 80V, TO-263; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power
The three parts on the right have similar specifications to NJVMJB44H11T4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryMax Power DissipationFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeConfigurationCase ConnectionPower - MaxTransistor ApplicationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxView Compare
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NJVMJB44H11T4GACTIVE (Last Updated: 6 days ago)4 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES3-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)EAR99Tin (Sn)Other Transistors2W50MHzMJB44H1131Single2W50MHzNPNNPN80V10A40 @ 4A 1V10μA1V @ 400mA, 8A80V1V10V5V4.83mm10.29mm11.05mmNoROHS3 CompliantLead Free---------------------
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-22 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES--55°C~150°C TJTape & Reel (TR)2016e3yesActive1 (Unlimited)-Tin (Sn)---MJD45H11-1---PNPPNP--40 @ 4A 1V1μA1V @ 400mA, 8A--------ROHS3 Compliant-SILICON2SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q101R-PSSO-G2SINGLECOLLECTOR1.75WSWITCHING80V8A90MHz90MHz---
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ACTIVE (Last Updated: 6 days ago)2 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)EAR99Tin (Sn)Other Transistors1.75W2MHzMJD295531-1.75W-PNPPNP60V10A20 @ 4A 4V50μA8V @ 3.3A, 10A60V-70V5V---NoROHS3 CompliantLead Free---------Single----10A2MHz----
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----YES--Tape & Reel (TR)-e3yesActive1 (Unlimited)-Tin (Sn)-----1---NPN--------------ROHS3 Compliant-SILICON2SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q101R-PSSO-G2SINGLECOLLECTOR-AMPLIFIER--3MHz-6A15100V
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