NE3210S01-T1B

CEL NE3210S01-T1B

Part Number:
NE3210S01-T1B
Manufacturer:
CEL
Ventron No:
2476159-NE3210S01-T1B
Description:
FET RF 4V 12GHZ S01
ECAD Model:
Datasheet:
NE3210S01-T1B

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Specifications
CEL NE3210S01-T1B technical specifications, attributes, parameters and parts with similar specifications to CEL NE3210S01-T1B.
  • Mount
    Surface Mount
  • Package / Case
    4-SMD
  • Number of Pins
    1
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Max Operating Temperature
    125°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • Max Power Dissipation
    165mW
  • Terminal Position
    RADIAL
  • Terminal Form
    GULL WING
  • Current Rating
    15mA
  • Frequency
    12GHz
  • Pin Count
    4
  • JESD-30 Code
    O-PRDB-G4
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power Dissipation
    165mW
  • Case Connection
    SOURCE
  • Current - Test
    10mA
  • Drain to Source Voltage (Vdss)
    4V
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    HFET
  • Continuous Drain Current (ID)
    70mA
  • Gate to Source Voltage (Vgs)
    -3V
  • Gain
    13.5dB
  • Drain to Source Breakdown Voltage
    4V
  • FET Technology
    HETERO-JUNCTION
  • Noise Figure
    0.35dB
  • Voltage - Test
    2V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
NE3210S01-T1B

Description: The NE3210S01-T1B is a high-performance RF JFET transistor from CEL Transistors. It is a Super Low Noise HJFET (High-Performance Junction Field-Effect Transistor) designed for use in RF applications. It features a low noise figure of 0.8 dB, high gain of 17 dB, and a wide frequency range of up to 3 GHz. It is also designed to be highly reliable and has a long lifetime.

Features:
- Low noise figure of 0.8 dB
- High gain of 17 dB
- Wide frequency range of up to 3 GHz
- High reliability and long lifetime

Applications:
- RF amplifiers
- Low noise amplifiers
- High frequency oscillators
- RF receivers
- RF transmitters
NE3210S01-T1B More Descriptions
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Trans JFET 4V 70mA AlGaAs HJFET 4-Pin Case S01 T/R
Small Signal GaAs FETs Super Lo Noise HJFET
RF JFET Transistors Super Lo Noise HJFET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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