CEL NE3210S01-T1B
- Part Number:
- NE3210S01-T1B
- Manufacturer:
- CEL
- Ventron No:
- 2476159-NE3210S01-T1B
- Description:
- FET RF 4V 12GHZ S01
- Datasheet:
- NE3210S01-T1B
CEL NE3210S01-T1B technical specifications, attributes, parameters and parts with similar specifications to CEL NE3210S01-T1B.
- MountSurface Mount
- Package / Case4-SMD
- Number of Pins1
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Max Operating Temperature125°C
- Min Operating Temperature-65°C
- Additional FeatureHIGH RELIABILITY
- Max Power Dissipation165mW
- Terminal PositionRADIAL
- Terminal FormGULL WING
- Current Rating15mA
- Frequency12GHz
- Pin Count4
- JESD-30 CodeO-PRDB-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeDEPLETION MODE
- Power Dissipation165mW
- Case ConnectionSOURCE
- Current - Test10mA
- Drain to Source Voltage (Vdss)4V
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeHFET
- Continuous Drain Current (ID)70mA
- Gate to Source Voltage (Vgs)-3V
- Gain13.5dB
- Drain to Source Breakdown Voltage4V
- FET TechnologyHETERO-JUNCTION
- Noise Figure0.35dB
- Voltage - Test2V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NE3210S01-T1B
Description: The NE3210S01-T1B is a high-performance RF JFET transistor from CEL Transistors. It is a Super Low Noise HJFET (High-Performance Junction Field-Effect Transistor) designed for use in RF applications. It features a low noise figure of 0.8 dB, high gain of 17 dB, and a wide frequency range of up to 3 GHz. It is also designed to be highly reliable and has a long lifetime.
Features:
- Low noise figure of 0.8 dB
- High gain of 17 dB
- Wide frequency range of up to 3 GHz
- High reliability and long lifetime
Applications:
- RF amplifiers
- Low noise amplifiers
- High frequency oscillators
- RF receivers
- RF transmitters
Description: The NE3210S01-T1B is a high-performance RF JFET transistor from CEL Transistors. It is a Super Low Noise HJFET (High-Performance Junction Field-Effect Transistor) designed for use in RF applications. It features a low noise figure of 0.8 dB, high gain of 17 dB, and a wide frequency range of up to 3 GHz. It is also designed to be highly reliable and has a long lifetime.
Features:
- Low noise figure of 0.8 dB
- High gain of 17 dB
- Wide frequency range of up to 3 GHz
- High reliability and long lifetime
Applications:
- RF amplifiers
- Low noise amplifiers
- High frequency oscillators
- RF receivers
- RF transmitters
NE3210S01-T1B More Descriptions
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Trans JFET 4V 70mA AlGaAs HJFET 4-Pin Case S01 T/R
Small Signal GaAs FETs Super Lo Noise HJFET
RF JFET Transistors Super Lo Noise HJFET
Trans JFET 4V 70mA AlGaAs HJFET 4-Pin Case S01 T/R
Small Signal GaAs FETs Super Lo Noise HJFET
RF JFET Transistors Super Lo Noise HJFET
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