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NAND512W3A2SNXE

Micron Technology Inc. NAND512W3A2SNXE

Part Number:
NAND512W3A2SNXE
Manufacturer:
Micron Technology Inc.
Ventron No:
3233488-NAND512W3A2SNXE
Description:
IC FLASH 512MBIT 48TSOP
ECAD Model:
Datasheet:
NAND512W3A2SNXE

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Specifications
Micron Technology Inc. NAND512W3A2SNXE technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND512W3A2SNXE.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFSOP (0.724, 18.40mm Width)
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • Voltage - Rated DC
    3.3V
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    DUAL
  • Number of Functions
    1
  • Supply Voltage
    3V
  • Terminal Pitch
    0.5mm
  • Base Part Number
    NAND512
  • Operating Supply Voltage
    3V
  • Voltage
    3.3V
  • Memory Size
    512Mb 64M x 8
  • Nominal Supply Current
    20mA
  • Memory Type
    Non-Volatile
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Organization
    64MX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    50ns
  • Address Bus Width
    26b
  • Density
    512 Mb
  • Standby Current-Max
    0.00005A
  • Access Time (Max)
    35 ns
  • Sync/Async
    Asynchronous
  • Word Size
    8b
  • Data Polling
    NO
  • Toggle Bit
    NO
  • Command User Interface
    YES
  • Number of Sectors/Size
    4K
  • Sector Size
    16K
  • Page Size
    528B
  • Ready/Busy
    YES
  • Height Seated (Max)
    1.2mm
  • Length
    18.4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
NAND512W3A2SNXE Overview
The Mount surface mount technology is a popular choice for electronic components, with its compact size and easy installation. The DC voltage rating for this particular component is 3.3V, making it suitable for a wide range of applications. Its FLASH-NAND technology allows for fast data transfer and storage. The voltage supply range of 2.7V~3.6V ensures efficient power consumption. With 1 function, this component is able to perform a variety of tasks. The memory interface is parallel, allowing for simultaneous data transfer. The write cycle time for both word and page is an impressive 50ns. The address bus width of 26b provides a wide range of memory addresses. Additionally, the command user interface is user-friendly, making it easy to operate. With a maximum seated height of only 1.2mm, this component is compact and space-saving.

NAND512W3A2SNXE Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins
Operating Supply Voltage:3V


NAND512W3A2SNXE Applications
There are a lot of Micron Technology Inc.
NAND512W3A2SNXE Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
NAND512W3A2SNXE More Descriptions
SLC NAND Flash Parallel 3V/3.3V 512M-bit 64M x 8 12us 48-Pin TSOP Tray
IC FLASH 512MBIT PARALLEL 48TSOP
IC FLASH 128M PARALLEL 64TBGA
SLC 512M 64MX8 TSOP
Product Comparison
The three parts on the right have similar specifications to NAND512W3A2SNXE.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Voltage - Rated DC
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Base Part Number
    Operating Supply Voltage
    Voltage
    Memory Size
    Nominal Supply Current
    Memory Type
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Address Bus Width
    Density
    Standby Current-Max
    Access Time (Max)
    Sync/Async
    Word Size
    Data Polling
    Toggle Bit
    Command User Interface
    Number of Sectors/Size
    Sector Size
    Page Size
    Ready/Busy
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    JESD-609 Code
    ECCN Code
    Terminal Finish
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Programming Voltage
    Write Cycle Time-Max (tWC)
    REACH SVHC
    Pbfree Code
    Qualification Status
    View Compare
  • NAND512W3A2SNXE
    NAND512W3A2SNXE
    Micron Technology Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48
    -40°C~85°C TA
    Tray
    2012
    Obsolete
    3 (168 Hours)
    48
    3.3V
    FLASH - NAND
    2.7V~3.6V
    DUAL
    1
    3V
    0.5mm
    NAND512
    3V
    3.3V
    512Mb 64M x 8
    20mA
    Non-Volatile
    FLASH
    Parallel
    64MX8
    8
    50ns
    26b
    512 Mb
    0.00005A
    35 ns
    Asynchronous
    8b
    NO
    NO
    YES
    4K
    16K
    528B
    YES
    1.2mm
    18.4mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NAND01GW3B2CN6E
    NAND01GW3B2CN6E
    Micron Technology Inc.
    -
    Surface Mount
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48
    -40°C~85°C TA
    Tray
    2008
    Obsolete
    3 (168 Hours)
    48
    -
    FLASH - NAND
    2.7V~3.6V
    DUAL
    1
    3V
    0.5mm
    NAND01G-A
    -
    -
    1Gb 128M x 8
    30mA
    Non-Volatile
    FLASH
    Parallel
    128MX8
    8
    25ns
    28b
    1 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    NO
    NO
    YES
    1K
    128K
    2kB
    YES
    1.2mm
    18.4mm
    No
    ROHS3 Compliant
    e3
    3A991.B.1.A
    Matte Tin (Sn)
    8542.32.00.51
    260
    30
    48
    3.6V
    3/3.3V
    2.7V
    3V
    25ms
    No SVHC
    -
    -
    NAND512W3A2SNXE vs NAND01GW3B2CN6E
  • NAND01GW3B2BZA6E
    NAND01GW3B2BZA6E
    Micron Technology Inc.
    -
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    -40°C~85°C TA
    Tray
    2004
    Obsolete
    3 (168 Hours)
    63
    -
    FLASH - NAND
    2.7V~3.6V
    BOTTOM
    1
    3V
    0.8mm
    NAND01G-A
    -
    -
    1Gb 128M x 8
    30mA
    Non-Volatile
    FLASH
    Parallel
    128MX8
    8
    30ns
    28b
    1 Gb
    0.00005A
    20 ns
    Asynchronous
    8b
    NO
    NO
    YES
    1K
    128K
    2Kwords
    YES
    1.05mm
    12mm
    -
    ROHS3 Compliant
    e1
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    260
    30
    63
    3.6V
    3/3.3V
    2.7V
    3V
    -
    -
    yes
    Not Qualified
    NAND512W3A2SNXE vs NAND01GW3B2BZA6E
  • NAND02GR3B2DZA6E
    NAND02GR3B2DZA6E
    Micron Technology Inc.
    -
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    -40°C~85°C TA
    Tray
    2008
    Discontinued
    3 (168 Hours)
    63
    -
    FLASH - NAND
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.8mm
    NAND02G
    1.8V
    -
    2Gb 256M x 8
    20mA
    Non-Volatile
    FLASH
    Parallel
    256MX8
    8
    45ns
    8b
    2 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    NO
    NO
    YES
    2K
    128K
    2kB
    YES
    1.05mm
    11mm
    No
    ROHS3 Compliant
    e1
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    260
    30
    63
    1.95V
    -
    1.7V
    -
    -
    -
    -
    -
    NAND512W3A2SNXE vs NAND02GR3B2DZA6E
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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