Micron Technology Inc. NAND512R3A2SZA6E

Name: NAND512R3A2SZA6E
Brand: Micron Technology Inc.
SKU: 3232809-NAND512R3A2SZA6E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NAND512R3A2SZA6E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3232809-NAND512R3A2SZA6E

Description:: IC FLASH 512MBIT 63VFBGA

ECAD Model:

Datasheet:: NAND512R3A2SZA6E

Specifications

Micron Technology Inc. NAND512R3A2SZA6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND512R3A2SZA6E.

Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
63-TFBGA
Number of Pins
63
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2011
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
63
ECCN Code
3A991.B.1.A
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8542.32.00.51
Voltage - Rated DC
1.8V
Technology
FLASH - NAND
Voltage - Supply
1.7V~1.95V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
0.8mm
Reflow Temperature-Max (s)
30
Base Part Number
NAND512
Pin Count
63
Operating Supply Voltage
1.8V
Voltage
1.8V
Memory Size
512Mb 64M x 8
Nominal Supply Current
15mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
64MX8
Memory Width
8
Write Cycle Time - Word, Page
50ns
Address Bus Width
26b
Density
512 Mb
Sync/Async
Asynchronous
Word Size
8b
Page Size
512B
Ambient Temperature Range High
85°C
Height
1.05mm
Length
11mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

NAND512R3A2SZA6E Overview
There is a memory type Non-Volatile for this type of device. Case Tray is available. The file is embedded in a 63-TFBGA case. The chip has an 512Mb 64M x 8 memory. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. A voltage of 1.7V~1.95V is possible to be applied to the supply. There is a recommended mounting type of Surface Mount for it. It is planted on the chip with 63 terminations. In total, 1 functions are supported by this part. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. As the base part number for the device, NAND512 is frequently used to select similar items. It is encased in an 63-pin package that contains this ic memory chip. It has 63 pins indicating it has 63 memory locations. The operating supply voltage of this memory chip is noted to be 1.8V. As a result of the Surface Mount mounting configuration, this chip is designed to be straightforward, high-efficiency, and easy to install. As far as its nominal supply current is concerned, this memory component carries a rating of 15mA. In terms of voltage, the chip appears to work well when the voltage is under 1.8V.

NAND512R3A2SZA6E Features
Package / Case: 63-TFBGA
63 Pins
Operating Supply Voltage:1.8V

NAND512R3A2SZA6E Applications
There are a lot of Micron Technology Inc. NAND512R3A2SZA6E Memory applications.

servers
workstations,
DVD disk buffer
printers
cell phones
personal digital assistants
eDRAM
Camcorders
hard disk drive (HDD)
Cache memory

NAND512R3A2SZA6E More Descriptions

SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA Tray
3A991.B.1.A Surface Mount NAND512 Tray ic memory 50ns 1.05mm 15mA 512Mb
IC FLSH 512MBIT PARALLEL 63VFBGA
LOGIC, 74AUC1G, D FLIP FLOP, US8

Product Comparison

The three parts on the right have similar specifications to NAND512R3A2SZA6E.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Voltage - Rated DC

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Base Part Number

Pin Count

Operating Supply Voltage

Voltage

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Sync/Async

Word Size

Page Size

Ambient Temperature Range High

Height

Length

Radiation Hardening

RoHS Status

Time@Peak Reflow Temperature-Max (s)

Supply Voltage-Max (Vsup)

Power Supplies

Supply Voltage-Min (Vsup)

Standby Current-Max

Access Time (Max)

Programming Voltage

Write Cycle Time-Max (tWC)

Data Polling

Toggle Bit

Command User Interface

Number of Sectors/Size

Sector Size

Ready/Busy

Height Seated (Max)

REACH SVHC

Qualification Status

View Compare
NAND512R3A2SZA6E

Micron Technology Inc.

Copper, Silver, Tin

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2011

e1

yes

Obsolete

3 (168 Hours)

63

3A991.B.1.A

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.51

1.8V

FLASH - NAND

1.7V~1.95V

BOTTOM

260

1

1.8V

0.8mm

30

NAND512

63

1.8V

1.8V

512Mb 64M x 8

15mA

Non-Volatile

FLASH

Parallel

64MX8

8

50ns

26b

512 Mb

Asynchronous

8b

512B

85°C

1.05mm

11mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NAND01GW3B2CN6E

Micron Technology Inc.

-

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

2008

e3

-

Obsolete

3 (168 Hours)

48

3A991.B.1.A

Matte Tin (Sn)

8542.32.00.51

-

FLASH - NAND

2.7V~3.6V

DUAL

260

1

3V

0.5mm

-

NAND01G-A

48

-

-

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

25ns

28b

1 Gb

Asynchronous

8b

2kB

-

-

18.4mm

No

ROHS3 Compliant

30

3.6V

3/3.3V

2.7V

0.00005A

25000 ns

3V

25ms

NO

NO

YES

1K

128K

YES

1.2mm

No SVHC

-

NAND512R3A2SZA6E vs NAND01GW3B2CN6E
NAND01GW3B2BZA6E

Micron Technology Inc.

-

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2004

e1

yes

Obsolete

3 (168 Hours)

63

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

-

FLASH - NAND

2.7V~3.6V

BOTTOM

260

1

3V

0.8mm

-

NAND01G-A

63

-

-

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

30ns

28b

1 Gb

Asynchronous

8b

2Kwords

-

-

12mm

-

ROHS3 Compliant

30

3.6V

3/3.3V

2.7V

0.00005A

20 ns

3V

-

NO

NO

YES

1K

128K

YES

1.05mm

-

Not Qualified

NAND512R3A2SZA6E vs NAND01GW3B2BZA6E
NAND02GR3B2DZA6E

Micron Technology Inc.

-

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2008

e1

-

Discontinued

3 (168 Hours)

63

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

-

FLASH - NAND

1.7V~1.95V

BOTTOM

260

1

1.8V

0.8mm

-

NAND02G

63

1.8V

-

2Gb 256M x 8

20mA

Non-Volatile

FLASH

Parallel

256MX8

8

45ns

8b

2 Gb

Asynchronous

8b

2kB

-

-

11mm

No

ROHS3 Compliant

30

1.95V

-

1.7V

0.00005A

25000 ns

-

-

NO

NO

YES

2K

128K

YES

1.05mm

-

-

NAND512R3A2SZA6E vs NAND02GR3B2DZA6E