STMicroelectronics NAND512R3A2AZA6E
- Part Number:
- NAND512R3A2AZA6E
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3724565-NAND512R3A2AZA6E
- Description:
- IC FLASH 512MBIT 60NS 55VFBGA
- Datasheet:
- NAND128/256/512/01G-A (V7.0)
STMicroelectronics NAND512R3A2AZA6E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics NAND512R3A2AZA6E.
- Mounting TypeSurface Mount
- Package / Case55-TFBGA
- Surface MountYES
- Number of Pins55
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations63
- ECCN Code3A991.B.1.A
- HTS Code8542.32.00.51
- TechnologyFLASH - NAND
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberNAND512
- Pin Count63
- JESD-30 CodeR-PBGA-B63
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.95V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Supply Current-Max0.015mA
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization64MX8
- Memory Width8
- Write Cycle Time - Word, Page60ns
- Standby Current-Max0.00005A
- Memory Density536870912 bit
- Access Time (Max)15000 ns
- Programming Voltage1.8V
- Data PollingNO
- Toggle BitNO
- Command User InterfaceYES
- Number of Sectors/Size4K
- Sector Size16K
- Page Size512words
- Ready/BusyYES
- Height Seated (Max)1.05mm
- Length11mm
- Width9mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NAND512R3A2AZA6E Overview
The NAND512 is a memory chip with a supply voltage of 1.8V and a maximum supply current of 0.015mA. It has a fast write cycle time of 60ns for both word and page operations, making it efficient for data storage and retrieval. With a memory density of 536870912 bits, this chip can store a large amount of data. It does not support data polling, meaning that it does not have the ability to continuously check for new data. The chip has a maximum height of 1.05mm when seated and has dimensions of 11mm in length and 9mm in width. It is not RoHS compliant, meaning it contains materials that are harmful to the environment.
NAND512R3A2AZA6E Features
Package / Case: 55-TFBGA
55 Pins
NAND512R3A2AZA6E Applications
There are a lot of STMicroelectronics
NAND512R3A2AZA6E Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The NAND512 is a memory chip with a supply voltage of 1.8V and a maximum supply current of 0.015mA. It has a fast write cycle time of 60ns for both word and page operations, making it efficient for data storage and retrieval. With a memory density of 536870912 bits, this chip can store a large amount of data. It does not support data polling, meaning that it does not have the ability to continuously check for new data. The chip has a maximum height of 1.05mm when seated and has dimensions of 11mm in length and 9mm in width. It is not RoHS compliant, meaning it contains materials that are harmful to the environment.
NAND512R3A2AZA6E Features
Package / Case: 55-TFBGA
55 Pins
NAND512R3A2AZA6E Applications
There are a lot of STMicroelectronics
NAND512R3A2AZA6E Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
NAND512R3A2AZA6E More Descriptions
64M X 8 FLASH 1.8V PROM 15000 ns PBGA63
IC FLSH 512MBIT PARALLEL 55VFBGA
1.8V V 63 Pin Memory IC NAND512 11mm mm
IC FLSH 512MBIT PARALLEL 55VFBGA
1.8V V 63 Pin Memory IC NAND512 11mm mm
The three parts on the right have similar specifications to NAND512R3A2AZA6E.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeSupply Current-MaxMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)Programming VoltageData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeight Seated (Max)LengthWidthRoHS StatusLead FreeMountPublishedJESD-609 CodeTerminal FinishNominal Supply CurrentAddress Bus WidthDensitySync/AsyncWord SizeWrite Cycle Time-Max (tWC)Radiation HardeningREACH SVHCPbfree CodeOperating Supply VoltageView Compare
-
NAND512R3A2AZA6ESurface Mount55-TFBGAYES55-40°C~85°C TATrayObsolete1 (Unlimited)633A991.B.1.A8542.32.00.51FLASH - NAND1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.8mmNOT SPECIFIEDNAND51263R-PBGA-B63Not Qualified1.95V1.8V1.7V512Mb 64M x 8Non-VolatileASYNCHRONOUS0.015mAFLASHParallel64MX8860ns0.00005A536870912 bit15000 ns1.8VNONOYES4K16K512wordsYES1.05mm11mm9mmNon-RoHS CompliantContains Lead---------------
-
Surface Mount48-TFSOP (0.724, 18.40mm Width)-48-40°C~85°C TATrayObsolete3 (168 Hours)483A991.B.1.A8542.32.00.51FLASH - NAND2.7V~3.6VDUAL26013V0.5mm30NAND01G-A48--3.6V3/3.3V2.7V1Gb 128M x 8Non-Volatile--FLASHParallel128MX8825ns0.00005A-25000 ns3VNONOYES1K128K2kBYES1.2mm18.4mm-ROHS3 Compliant-Surface Mount2008e3Matte Tin (Sn)30mA28b1 GbAsynchronous8b25msNoNo SVHC--
-
Surface Mount63-TFBGA-63-40°C~85°C TATrayObsolete3 (168 Hours)633A991.B.1.A8542.32.00.51FLASH - NAND2.7V~3.6VBOTTOM26013V0.8mm30NAND01G-A63-Not Qualified3.6V3/3.3V2.7V1Gb 128M x 8Non-Volatile--FLASHParallel128MX8830ns0.00005A-20 ns3VNONOYES1K128K2KwordsYES1.05mm12mm-ROHS3 Compliant-Surface Mount2004e1TIN SILVER COPPER30mA28b1 GbAsynchronous8b---yes-
-
Surface Mount63-TFBGA-63-40°C~85°C TATrayDiscontinued3 (168 Hours)633A991.B.1.A8542.32.00.51FLASH - NAND1.7V~1.95VBOTTOM26011.8V0.8mm30NAND02G63--1.95V-1.7V2Gb 256M x 8Non-Volatile--FLASHParallel256MX8845ns0.00005A-25000 ns-NONOYES2K128K2kBYES1.05mm11mm-ROHS3 Compliant-Surface Mount2008e1TIN SILVER COPPER20mA8b2 GbAsynchronous8b-No--1.8V
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