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NAND256W3A2BN6E

Micron Technology Inc. NAND256W3A2BN6E

Part Number:
NAND256W3A2BN6E
Manufacturer:
Micron Technology Inc.
Ventron No:
3232740-NAND256W3A2BN6E
Description:
IC FLASH 256MBIT 50NS 48TSOP
ECAD Model:
Datasheet:
NAND256W3A2BN6E

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Specifications
Micron Technology Inc. NAND256W3A2BN6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND256W3A2BN6E.
  • Contact Plating
    Gold, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFSOP (0.724, 18.40mm Width)
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • Termination
    SMD/SMT
  • ECCN Code
    3A991.B.1.A
  • Terminal Finish
    Matte Tin (Sn)
  • HTS Code
    8542.32.00.51
  • Voltage - Rated DC
    3V
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    3V
  • Terminal Pitch
    0.5mm
  • Reflow Temperature-Max (s)
    30
  • Base Part Number
    NAND256-A
  • Pin Count
    48
  • Voltage
    3V
  • Memory Size
    256Mb 32M x 8
  • Nominal Supply Current
    20mA
  • Memory Type
    Non-Volatile
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Organization
    32MX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    50ns
  • Address Bus Width
    25b
  • Density
    256 Mb
  • Standby Current-Max
    0.00005A
  • Access Time (Max)
    35 ns
  • Sync/Async
    Asynchronous
  • Word Size
    8b
  • Data Polling
    NO
  • Toggle Bit
    NO
  • Command User Interface
    YES
  • Number of Sectors/Size
    2K
  • Sector Size
    16K
  • Page Size
    528B
  • Ready/Busy
    YES
  • Height Seated (Max)
    1.2mm
  • Length
    18.4mm
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
NAND256W3A2BN6E Overview
This product comes in a tray packaging and has a matte tin (Sn) terminal finish. It can withstand a peak reflow temperature of 260 degrees Celsius. With 1 function, it has a terminal pitch of 0.5mm and a pin count of 48. The memory size is 256Mb, with a configuration of 32M x 8. It has a memory width of 8 and does not have a toggle bit. This product is not radiation hardened.

NAND256W3A2BN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins

NAND256W3A2BN6E Applications
There are a lot of Micron Technology Inc. NAND256W3A2BN6E Memory applications.

eSRAM
personal digital assistants
networks
supercomputers
Camcorders
hard disk drive (HDD)
servers
mainframes
multimedia computers
personal computers
NAND256W3A2BN6E More Descriptions
32MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
SLC NAND Flash Parallel 3V/3.3V 256M-bit 32M x 8 12us 48-Pin TSOP
FLASH NAND 256MB, SMD, TSOP48, 256; Memory type:Flash, NAND; Memory size:256Mbit; Memory configuration:2048 x 32bit; Voltage, Memory Vcc:3.3V; Case style:TSOP; Temperature, operating range:-40(degree C) to 85(degree C); Base RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NAND256W3A2BN6E.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    HTS Code
    Voltage - Rated DC
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Voltage
    Memory Size
    Nominal Supply Current
    Memory Type
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Address Bus Width
    Density
    Standby Current-Max
    Access Time (Max)
    Sync/Async
    Word Size
    Data Polling
    Toggle Bit
    Command User Interface
    Number of Sectors/Size
    Sector Size
    Page Size
    Ready/Busy
    Height Seated (Max)
    Length
    Radiation Hardening
    REACH SVHC
    RoHS Status
    Time@Peak Reflow Temperature-Max (s)
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Programming Voltage
    Write Cycle Time-Max (tWC)
    Qualification Status
    Operating Supply Voltage
    View Compare
  • NAND256W3A2BN6E
    NAND256W3A2BN6E
    Micron Technology Inc.
    Gold, Tin
    Surface Mount
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48
    -40°C~85°C TA
    Tray
    2004
    e3
    yes
    Obsolete
    3 (168 Hours)
    48
    SMD/SMT
    3A991.B.1.A
    Matte Tin (Sn)
    8542.32.00.51
    3V
    FLASH - NAND
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.5mm
    30
    NAND256-A
    48
    3V
    256Mb 32M x 8
    20mA
    Non-Volatile
    FLASH
    Parallel
    32MX8
    8
    50ns
    25b
    256 Mb
    0.00005A
    35 ns
    Asynchronous
    8b
    NO
    NO
    YES
    2K
    16K
    528B
    YES
    1.2mm
    18.4mm
    No
    No SVHC
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NAND01GW3B2CN6E
    NAND01GW3B2CN6E
    Micron Technology Inc.
    -
    Surface Mount
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48
    -40°C~85°C TA
    Tray
    2008
    e3
    -
    Obsolete
    3 (168 Hours)
    48
    -
    3A991.B.1.A
    Matte Tin (Sn)
    8542.32.00.51
    -
    FLASH - NAND
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.5mm
    -
    NAND01G-A
    48
    -
    1Gb 128M x 8
    30mA
    Non-Volatile
    FLASH
    Parallel
    128MX8
    8
    25ns
    28b
    1 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    NO
    NO
    YES
    1K
    128K
    2kB
    YES
    1.2mm
    18.4mm
    No
    No SVHC
    ROHS3 Compliant
    30
    3.6V
    3/3.3V
    2.7V
    3V
    25ms
    -
    -
    NAND256W3A2BN6E vs NAND01GW3B2CN6E
  • NAND01GW3B2BZA6E
    NAND01GW3B2BZA6E
    Micron Technology Inc.
    -
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    -40°C~85°C TA
    Tray
    2004
    e1
    yes
    Obsolete
    3 (168 Hours)
    63
    -
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    -
    FLASH - NAND
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.8mm
    -
    NAND01G-A
    63
    -
    1Gb 128M x 8
    30mA
    Non-Volatile
    FLASH
    Parallel
    128MX8
    8
    30ns
    28b
    1 Gb
    0.00005A
    20 ns
    Asynchronous
    8b
    NO
    NO
    YES
    1K
    128K
    2Kwords
    YES
    1.05mm
    12mm
    -
    -
    ROHS3 Compliant
    30
    3.6V
    3/3.3V
    2.7V
    3V
    -
    Not Qualified
    -
    NAND256W3A2BN6E vs NAND01GW3B2BZA6E
  • NAND02GR3B2DZA6E
    NAND02GR3B2DZA6E
    Micron Technology Inc.
    -
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    -40°C~85°C TA
    Tray
    2008
    e1
    -
    Discontinued
    3 (168 Hours)
    63
    -
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    -
    FLASH - NAND
    1.7V~1.95V
    BOTTOM
    260
    1
    1.8V
    0.8mm
    -
    NAND02G
    63
    -
    2Gb 256M x 8
    20mA
    Non-Volatile
    FLASH
    Parallel
    256MX8
    8
    45ns
    8b
    2 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    NO
    NO
    YES
    2K
    128K
    2kB
    YES
    1.05mm
    11mm
    No
    -
    ROHS3 Compliant
    30
    1.95V
    -
    1.7V
    -
    -
    -
    1.8V
    NAND256W3A2BN6E vs NAND02GR3B2DZA6E
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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