Micron Technology Inc. NAND04GW3C2BN6E

Name: NAND04GW3C2BN6E
Brand: Micron Technology Inc.
SKU: 3242782-NAND04GW3C2BN6E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NAND04GW3C2BN6E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3242782-NAND04GW3C2BN6E

Description:: IC FLASH 4GBIT 48TSOP

ECAD Model:

Datasheet:: NAND04GW3C2BN6E

Specifications

Micron Technology Inc. NAND04GW3C2BN6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND04GW3C2BN6E.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Terminal Pitch
0.5mm
Reach Compliance Code
unknown
Base Part Number
NAND04G
Qualification Status
Not Qualified
Power Supplies
3/3.3V
Memory Size
4Gb 512M x 8
Nominal Supply Current
30mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
512MX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Address Bus Width
30b
Density
4 Gb
Standby Current-Max
0.00005A
Access Time (Max)
20 ns
Sync/Async
Asynchronous
Word Size
8b
Data Polling
NO
Toggle Bit
NO
Command User Interface
YES
Number of Sectors/Size
2K
Sector Size
256K
Page Size
2Kwords
Ready/Busy
YES
RoHS Status
ROHS3 Compliant

Description

NAND04GW3C2BN6E Overview
The product features a 48-TFSOP package with dimensions of 0.724 and 18.40mm width, making it compact and suitable for various applications. It has an operating temperature range of -40°C to 85°C, ensuring its functionality in harsh environments. However, please note that this product is currently classified as obsolete and is not qualified for use. It has a moisture sensitivity level of 3, which allows for a storage time of 168 hours. The base part number is NAND04G, and it has a memory size of 4Gb 512M x 8. This non-volatile memory has a density of 4 Gb and a sector size of 256K, providing ample storage capacity for data-intensive applications.

NAND04GW3C2BN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins

NAND04GW3C2BN6E Applications
There are a lot of Micron Technology Inc.
NAND04GW3C2BN6E Memory applications.

supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card

NAND04GW3C2BN6E More Descriptions

IC FLASH 4GBIT PARALLEL 48TSOP
REEL / 8M BIT SERIAL FLASH MEMOR

Product Comparison

The three parts on the right have similar specifications to NAND04GW3C2BN6E.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Voltage - Supply

Terminal Position

Terminal Pitch

Reach Compliance Code

Base Part Number

Qualification Status

Power Supplies

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Access Time (Max)

Sync/Async

Word Size

Data Polling

Toggle Bit

Command User Interface

Number of Sectors/Size

Sector Size

Page Size

Ready/Busy

RoHS Status

Published

JESD-609 Code

ECCN Code

Terminal Finish

HTS Code

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Time@Peak Reflow Temperature-Max (s)

Pin Count

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Programming Voltage

Write Cycle Time-Max (tWC)

Height Seated (Max)

Length

Radiation Hardening

REACH SVHC

Pbfree Code

Operating Supply Voltage

View Compare
NAND04GW3C2BN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

Obsolete

3 (168 Hours)

48

FLASH - NAND

2.7V~3.6V

DUAL

0.5mm

unknown

NAND04G

Not Qualified

3/3.3V

4Gb 512M x 8

30mA

Non-Volatile

FLASH

Parallel

512MX8

8

25ns

30b

4 Gb

0.00005A

20 ns

Asynchronous

8b

NO

NO

YES

2K

256K

2Kwords

YES

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NAND01GW3B2CN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

Obsolete

3 (168 Hours)

48

FLASH - NAND

2.7V~3.6V

DUAL

0.5mm

-

NAND01G-A

-

3/3.3V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

25ns

28b

1 Gb

0.00005A

25000 ns

Asynchronous

8b

NO

NO

YES

1K

128K

2kB

YES

ROHS3 Compliant

2008

e3

3A991.B.1.A

Matte Tin (Sn)

8542.32.00.51

260

1

3V

30

48

3.6V

2.7V

3V

25ms

1.2mm

18.4mm

No

No SVHC

-

-

NAND04GW3C2BN6E vs NAND01GW3B2CN6E
NAND01GW3B2BZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

Obsolete

3 (168 Hours)

63

FLASH - NAND

2.7V~3.6V

BOTTOM

0.8mm

-

NAND01G-A

Not Qualified

3/3.3V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

30ns

28b

1 Gb

0.00005A

20 ns

Asynchronous

8b

NO

NO

YES

1K

128K

2Kwords

YES

ROHS3 Compliant

2004

e1

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

260

1

3V

30

63

3.6V

2.7V

3V

-

1.05mm

12mm

-

-

yes

-

NAND04GW3C2BN6E vs NAND01GW3B2BZA6E
NAND02GR3B2DZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

Discontinued

3 (168 Hours)

63

FLASH - NAND

1.7V~1.95V

BOTTOM

0.8mm

-

NAND02G

-

-

2Gb 256M x 8

20mA

Non-Volatile

FLASH

Parallel

256MX8

8

45ns

8b

2 Gb

0.00005A

25000 ns

Asynchronous

8b

NO

NO

YES

2K

128K

2kB

YES

ROHS3 Compliant

2008

e1

3A991.B.1.A

TIN SILVER COPPER

8542.32.00.51

260

1

1.8V

30

63

1.95V

1.7V

-

-

1.05mm

11mm

No

-

-

1.8V

NAND04GW3C2BN6E vs NAND02GR3B2DZA6E