Micron Technology Inc. NAND04GW3B2DN6E

Name: NAND04GW3B2DN6E
Brand: Micron Technology Inc.
SKU: 3247560-NAND04GW3B2DN6E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NAND04GW3B2DN6E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3247560-NAND04GW3B2DN6E

Description:: IC FLASH 4GBIT 48TSOP

ECAD Model:

Datasheet:: NAND(04,08)G-(B2D,BxC)

Specifications

Micron Technology Inc. NAND04GW3B2DN6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND04GW3B2DN6E.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2004
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.1.A
HTS Code
8542.32.00.51
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.5mm
Base Part Number
NAND04G
Pin Count
48
Supply Voltage-Max (Vsup)
3.6V
Power Supplies
3/3.3V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
4Gb 512M x 8
Nominal Supply Current
30mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
512MX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Address Bus Width
29b
Density
4 Gb
Standby Current-Max
0.00005A
Access Time (Max)
25000 ns
Sync/Async
Asynchronous
Word Size
8b
Programming Voltage
3V
Data Polling
NO
Toggle Bit
NO
Command User Interface
YES
Number of Sectors/Size
4K
Sector Size
128K
Page Size
2kB
Ready/Busy
YES
Height Seated (Max)
1.2mm
Length
18.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

NAND04GW3B2DN6E Overview
This product has an operating temperature range of -40°C to 85°C, making it suitable for use in a variety of environments. It falls under ECCN code 3A991.B.1.A, indicating that it is a controlled item for export. The voltage supply for this product is 2.7V to 3.6V, and it has a nominal supply current of 30mA. With a density of 4 Gb, it offers ample storage capacity. It is an asynchronous device, meaning it does not require a clock signal for operation. The programming voltage for this product is 3V, and it does not support data polling. The maximum seated height is 1.2mm, and it has a length of 18.4mm.

NAND04GW3B2DN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins

NAND04GW3B2DN6E Applications
There are a lot of Micron Technology Inc.
NAND04GW3B2DN6E Memory applications.

supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card

NAND04GW3B2DN6E More Descriptions

512K X 8 FLASH 3V PROM 20 ns PDSO48
NAND Flash NAND & S.MEDIA FLASH
Flash, 512MX8, 25000ns, PDSO48

Product Comparison

The three parts on the right have similar specifications to NAND04GW3B2DN6E.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Voltage - Supply

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

Base Part Number

Pin Count

Supply Voltage-Max (Vsup)

Power Supplies

Supply Voltage-Min (Vsup)

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Access Time (Max)

Sync/Async

Word Size

Programming Voltage

Data Polling

Toggle Bit

Command User Interface

Number of Sectors/Size

Sector Size

Page Size

Ready/Busy

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

JESD-609 Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Write Cycle Time-Max (tWC)

REACH SVHC

Pbfree Code

Qualification Status

Operating Supply Voltage

View Compare
NAND04GW3B2DN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

2004

Discontinued

3 (168 Hours)

48

3A991.B.1.A

8542.32.00.51

FLASH - NAND

2.7V~3.6V

DUAL

1

3V

0.5mm

NAND04G

48

3.6V

3/3.3V

2.7V

4Gb 512M x 8

30mA

Non-Volatile

FLASH

Parallel

512MX8

8

25ns

29b

4 Gb

0.00005A

25000 ns

Asynchronous

8b

3V

NO

NO

YES

4K

128K

2kB

YES

1.2mm

18.4mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
NAND01GW3B2CN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

2008

Obsolete

3 (168 Hours)

48

3A991.B.1.A

8542.32.00.51

FLASH - NAND

2.7V~3.6V

DUAL

1

3V

0.5mm

NAND01G-A

48

3.6V

3/3.3V

2.7V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

25ns

28b

1 Gb

0.00005A

25000 ns

Asynchronous

8b

3V

NO

NO

YES

1K

128K

2kB

YES

1.2mm

18.4mm

No

ROHS3 Compliant

e3

Matte Tin (Sn)

260

30

25ms

No SVHC

-

-

-

NAND04GW3B2DN6E vs NAND01GW3B2CN6E
NAND01GW3B2BZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2004

Obsolete

3 (168 Hours)

63

3A991.B.1.A

8542.32.00.51

FLASH - NAND

2.7V~3.6V

BOTTOM

1

3V

0.8mm

NAND01G-A

63

3.6V

3/3.3V

2.7V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

30ns

28b

1 Gb

0.00005A

20 ns

Asynchronous

8b

3V

NO

NO

YES

1K

128K

2Kwords

YES

1.05mm

12mm

-

ROHS3 Compliant

e1

TIN SILVER COPPER

260

30

-

-

yes

Not Qualified

-

NAND04GW3B2DN6E vs NAND01GW3B2BZA6E
NAND02GR3B2DZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2008

Discontinued

3 (168 Hours)

63

3A991.B.1.A

8542.32.00.51

FLASH - NAND

1.7V~1.95V

BOTTOM

1

1.8V

0.8mm

NAND02G

63

1.95V

-

1.7V

2Gb 256M x 8

20mA

Non-Volatile

FLASH

Parallel

256MX8

8

45ns

8b

2 Gb

0.00005A

25000 ns

Asynchronous

8b

-

NO

NO

YES

2K

128K

2kB

YES

1.05mm

11mm

No

ROHS3 Compliant

e1

TIN SILVER COPPER

260

30

-

-

-

-

1.8V

NAND04GW3B2DN6E vs NAND02GR3B2DZA6E