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NAND01GW3B2AN6E

STMicroelectronics NAND01GW3B2AN6E

Part Number:
NAND01GW3B2AN6E
Manufacturer:
STMicroelectronics
Ventron No:
3239283-NAND01GW3B2AN6E
Description:
IC FLASH 1GBIT 50NS 48TSOP
ECAD Model:
Datasheet:
NAND01G-B2B, NAND02G-B2C

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Specifications
STMicroelectronics NAND01GW3B2AN6E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics NAND01GW3B2AN6E.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFSOP (0.724, 18.40mm Width)
  • Number of Pins
    48
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tube
  • JESD-609 Code
    e3/e6
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    48
  • ECCN Code
    3A991.B.1.A
  • Terminal Finish
    TIN/TIN BISMUTH
  • HTS Code
    8542.32.00.51
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    3V
  • Terminal Pitch
    0.5mm
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    NAND01
  • Pin Count
    48
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    3.6V
  • Power Supplies
    3/3.3V
  • Supply Voltage-Min (Vsup)
    2.7V
  • Memory Size
    1Gb 128M x 8
  • Nominal Supply Current
    30mA
  • Memory Type
    Non-Volatile
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Data Bus Width
    8b
  • Organization
    128MX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    30ns
  • Address Bus Width
    28b
  • Density
    1 Gb
  • Standby Current-Max
    0.00005A
  • Access Time (Max)
    25000 ns
  • Sync/Async
    Asynchronous
  • Word Size
    8b
  • Programming Voltage
    3V
  • Data Polling
    NO
  • Toggle Bit
    NO
  • Command User Interface
    YES
  • Number of Sectors/Size
    1K
  • Sector Size
    128K
  • Page Size
    2Kwords
  • Ready/Busy
    YES
  • Height Seated (Max)
    1.2mm
  • Length
    18.4mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NAND01GW3B2AN6E Overview
The terminal position of this electronic device is DUAL, meaning it has two separate terminals for input and output. Its base part number is NAND01, indicating that it uses NAND flash memory technology. The minimum supply voltage for this device is 2.7V, ensuring efficient and stable performance. Its memory format is FLASH, allowing for fast and reliable data storage. The data bus width is 8b, providing a wide range of data transfer capabilities. With a density of 1 Gb, this device can store a large amount of data. Its maximum access time is 25000 ns, ensuring quick retrieval of information. Data polling is not required for this device, and it features a command user interface for easy operation. Additionally, the Ready/Busy feature is available, indicating the status of the device.

NAND01GW3B2AN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins


NAND01GW3B2AN6E Applications
There are a lot of STMicroelectronics
NAND01GW3B2AN6E Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
NAND01GW3B2AN6E More Descriptions
3A991.B.1.A Surface Mount NAND01 Tube ic memory 25000ns 18.4mm 30mA 1Gb
IC FLASH 1GBIT PARALLEL 48TSOP
Flash, 128MX8, 25000ns, PDSO48
Product Comparison
The three parts on the right have similar specifications to NAND01GW3B2AN6E.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Memory Size
    Nominal Supply Current
    Memory Type
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Address Bus Width
    Density
    Standby Current-Max
    Access Time (Max)
    Sync/Async
    Word Size
    Programming Voltage
    Data Polling
    Toggle Bit
    Command User Interface
    Number of Sectors/Size
    Sector Size
    Page Size
    Ready/Busy
    Height Seated (Max)
    Length
    RoHS Status
    Lead Free
    Published
    Write Cycle Time-Max (tWC)
    Radiation Hardening
    REACH SVHC
    Pbfree Code
    Operating Supply Voltage
    View Compare
  • NAND01GW3B2AN6E
    NAND01GW3B2AN6E
    STMicroelectronics
    Surface Mount
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48
    -40°C~85°C TA
    Tube
    e3/e6
    Obsolete
    3 (168 Hours)
    48
    3A991.B.1.A
    TIN/TIN BISMUTH
    8542.32.00.51
    FLASH - NAND
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.5mm
    unknown
    NOT SPECIFIED
    NAND01
    48
    Not Qualified
    3.6V
    3/3.3V
    2.7V
    1Gb 128M x 8
    30mA
    Non-Volatile
    FLASH
    Parallel
    8b
    128MX8
    8
    30ns
    28b
    1 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    3V
    NO
    NO
    YES
    1K
    128K
    2Kwords
    YES
    1.2mm
    18.4mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • NAND01GW3B2CN6E
    NAND01GW3B2CN6E
    Micron Technology Inc.
    Surface Mount
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48
    -40°C~85°C TA
    Tray
    e3
    Obsolete
    3 (168 Hours)
    48
    3A991.B.1.A
    Matte Tin (Sn)
    8542.32.00.51
    FLASH - NAND
    2.7V~3.6V
    DUAL
    260
    1
    3V
    0.5mm
    -
    30
    NAND01G-A
    48
    -
    3.6V
    3/3.3V
    2.7V
    1Gb 128M x 8
    30mA
    Non-Volatile
    FLASH
    Parallel
    -
    128MX8
    8
    25ns
    28b
    1 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    3V
    NO
    NO
    YES
    1K
    128K
    2kB
    YES
    1.2mm
    18.4mm
    ROHS3 Compliant
    -
    2008
    25ms
    No
    No SVHC
    -
    -
    NAND01GW3B2AN6E vs NAND01GW3B2CN6E
  • NAND01GW3B2BZA6E
    NAND01GW3B2BZA6E
    Micron Technology Inc.
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    -40°C~85°C TA
    Tray
    e1
    Obsolete
    3 (168 Hours)
    63
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    FLASH - NAND
    2.7V~3.6V
    BOTTOM
    260
    1
    3V
    0.8mm
    -
    30
    NAND01G-A
    63
    Not Qualified
    3.6V
    3/3.3V
    2.7V
    1Gb 128M x 8
    30mA
    Non-Volatile
    FLASH
    Parallel
    -
    128MX8
    8
    30ns
    28b
    1 Gb
    0.00005A
    20 ns
    Asynchronous
    8b
    3V
    NO
    NO
    YES
    1K
    128K
    2Kwords
    YES
    1.05mm
    12mm
    ROHS3 Compliant
    -
    2004
    -
    -
    -
    yes
    -
    NAND01GW3B2AN6E vs NAND01GW3B2BZA6E
  • NAND02GR3B2DZA6E
    NAND02GR3B2DZA6E
    Micron Technology Inc.
    Surface Mount
    Surface Mount
    63-TFBGA
    63
    -40°C~85°C TA
    Tray
    e1
    Discontinued
    3 (168 Hours)
    63
    3A991.B.1.A
    TIN SILVER COPPER
    8542.32.00.51
    FLASH - NAND
    1.7V~1.95V
    BOTTOM
    260
    1
    1.8V
    0.8mm
    -
    30
    NAND02G
    63
    -
    1.95V
    -
    1.7V
    2Gb 256M x 8
    20mA
    Non-Volatile
    FLASH
    Parallel
    -
    256MX8
    8
    45ns
    8b
    2 Gb
    0.00005A
    25000 ns
    Asynchronous
    8b
    -
    NO
    NO
    YES
    2K
    128K
    2kB
    YES
    1.05mm
    11mm
    ROHS3 Compliant
    -
    2008
    -
    No
    -
    -
    1.8V
    NAND01GW3B2AN6E vs NAND02GR3B2DZA6E
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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