NXP USA Inc. MW7IC2425NBR1
- Part Number:
- MW7IC2425NBR1
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2474757-MW7IC2425NBR1
- Description:
- FET RF 65V 2.45GHZ TO-272-16
- Datasheet:
- MW7IC2425
NXP USA Inc. MW7IC2425NBR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MW7IC2425NBR1.
- Factory Lead Time10 Weeks
- Package / CaseTO-272-16 Variant, Flat Leads
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations16
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated65V
- Additional FeatureESD PROTECTION
- HTS Code8541.29.00.75
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Frequency2.45GHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMW7IC2425
- JESD-30 CodeR-PDFM-F16
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Current - Test55mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain27.7dB
- DS Breakdown Voltage-Min65V
- Power - Output25W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MW7IC2425NBR1 Description
Specifically created for 2450 MHz CW large-signal output and driver applications. Devices can be applied in industrial, medicinal, and scientific settings. These devices are made to guarantee a high degree of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
MW7IC2425NBR1 Features
? Up to a Maximum of 28 VDD Operation Qualified
? Protection from Integrated ESD
? Outstanding Thermal Stability
? Plastic Package with 225°C Capability
? RoHS conformant
? on reel-to-reel tape. 500 Units per 44 mm, 13 inch Reel, R1 Suffix.
MW7IC2425NBR1 Applications
Switching applications
Specifically created for 2450 MHz CW large-signal output and driver applications. Devices can be applied in industrial, medicinal, and scientific settings. These devices are made to guarantee a high degree of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
MW7IC2425NBR1 Features
? Up to a Maximum of 28 VDD Operation Qualified
? Protection from Integrated ESD
? Outstanding Thermal Stability
? Plastic Package with 225°C Capability
? RoHS conformant
? on reel-to-reel tape. 500 Units per 44 mm, 13 inch Reel, R1 Suffix.
MW7IC2425NBR1 Applications
Switching applications
MW7IC2425NBR1 More Descriptions
Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V
Trans RF MOSFET N-CH 65V 17-Pin TO-272 W T/R
RF MOSFET Transistors HV7 2400MHZ 4W TO270WB16G
Trans RF MOSFET N-CH 65V 17-Pin TO-272 W T/R
RF MOSFET Transistors HV7 2400MHZ 4W TO270WB16G
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