ON Semiconductor MUN5335DW1T2G
- Part Number:
- MUN5335DW1T2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068493-MUN5335DW1T2G
- Description:
- TRANS NPN/PNP PREBIAS 0.25W SC88
- Datasheet:
- MUN5335DW1T2G
ON Semiconductor MUN5335DW1T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5335DW1T2G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 21.4
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN53**DW1
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation187mW
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)2.2k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON Semiconductor MUN5335DW1T2G is a pre-biased, NPN/PNP transistor array in a SC-88 package. It is designed for use in low-power, low-voltage applications. This device features a low collector-emitter saturation voltage, low collector-emitter leakage current, and low base-emitter voltage. It is capable of operating at a maximum power dissipation of 0.25W.
Features of the MUN5335DW1T2G include:
• Low collector-emitter saturation voltage
• Low collector-emitter leakage current
• Low base-emitter voltage
• Maximum power dissipation of 0.25W
• SC-88 package
Applications of the MUN5335DW1T2G include:
• Low-power, low-voltage applications
• Automotive applications
• Industrial applications
• Consumer electronics
• Telecommunications
• Computer peripherals
Features of the MUN5335DW1T2G include:
• Low collector-emitter saturation voltage
• Low collector-emitter leakage current
• Low base-emitter voltage
• Maximum power dissipation of 0.25W
• SC-88 package
Applications of the MUN5335DW1T2G include:
• Low-power, low-voltage applications
• Automotive applications
• Industrial applications
• Consumer electronics
• Telecommunications
• Computer peripherals
MUN5335DW1T2G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SC-88-6 Digital Transistors ROHS
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
Complementary Bipolar Digital Transistor (BRT)
TRANSISTOR, AEC-Q101, NPN/PNP, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SC-88-6 Digital Transistors ROHS
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
Complementary Bipolar Digital Transistor (BRT)
TRANSISTOR, AEC-Q101, NPN/PNP, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MUN5335DW1T2G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeMountTerminal FinishReach Compliance CodeQualification StatusTransistor ApplicationTransistor Element MaterialJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeView Compare
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MUN5335DW1T2GACTIVE (Last Updated: 3 days ago)8 WeeksTinSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 21.4BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW162NPN, PNPDual187mW1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V802.2k Ω100mA47k ΩNoROHS3 CompliantLead Free-----------
-
---Surface Mount6-TSSOP, SC-88, SOT-363-6Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 2.14BIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN52**DW1T62NPNDual187mW2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-22k Ω100mA47k Ω-Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliantNot QualifiedSWITCHING-----
-
ACTIVE (Last Updated: 1 day ago)2 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW162NPN, PNPDual187mW1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V154.7k Ω100mA4.7k ΩNoRoHS CompliantLead Free-Tin (Sn)--SWITCHING-----
-
---Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99--BUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V250mWGULL WING240-100mA30MUN51**DW1T62---2 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-100k Ω-100k Ω-Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliantNot QualifiedSWITCHINGSILICONR-PDSO-G6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR250mWPNP
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