ON Semiconductor MUN5334DW1T1G
- Part Number:
- MUN5334DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2461827-MUN5334DW1T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT363
- ECAD Model:
-
- Datasheet:
- MUN5334DW1T1G
ON Semiconductor MUN5334DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5334DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 2.14
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN53**DW1
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation187mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)22k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MUN5334DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5334DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5334DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5334DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5334DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5334DW1T1G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN5334DW1: Small Signal Bias Resistor Transistor SC88, (SOT363) Complementary NPN & PNP 50V
Complementary Bipolar Digital Transistor (BRT)
TRANS, RF, NPN/PNP COMP, 50V, SOT-23; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Brt Transistor, 50V, 22K/47K, Sot-363-6; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi MUN5334DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN5334DW1: Small Signal Bias Resistor Transistor SC88, (SOT363) Complementary NPN & PNP 50V
Complementary Bipolar Digital Transistor (BRT)
TRANS, RF, NPN/PNP COMP, 50V, SOT-23; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Brt Transistor, 50V, 22K/47K, Sot-363-6; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi MUN5334DW1T1G
The three parts on the right have similar specifications to MUN5334DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeMountTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusTransistor Element MaterialConfigurationPower - MaxPolarity/Channel TypeView Compare
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MUN5334DW1T1GACTIVE (Last Updated: 1 day ago)2 WeeksTinSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2009e3yesObsolete1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 2.14BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW162NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V8022k Ω100mA47k ΩNoRoHS CompliantLead Free---------- -
---Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2009e0-Obsolete1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTORBIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN53**DW162NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-4.7k Ω100mA--Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn80Pb20)not_compliantR-PDSO-G6Not Qualified----
-
ACTIVE (Last Updated: 1 day ago)2 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW162NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V154.7k Ω100mA4.7k ΩNoRoHS CompliantLead Free-Tin (Sn)-------
-
---Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99--BUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V250mWGULL WING240-100mA30MUN51**DW1T62---SWITCHING2 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-100k Ω-100k Ω-Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliantR-PDSO-G6Not QualifiedSILICONSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR250mWPNP
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