ON Semiconductor MUN5331DW1T1G

Name: MUN5331DW1T1G
Brand: ON Semiconductor
SKU: 3068457-MUN5331DW1T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MUN5331DW1T1G

Manufacturer:: ON Semiconductor

Ventron No:: 3068457-MUN5331DW1T1G

Description:: TRANS PREBIAS NPN/PNP SOT363

ECAD Model:

Datasheet:: MUN5331DW1T1G

Specifications

ON Semiconductor MUN5331DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5331DW1T1G.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO 1
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
250mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MUN53**DW1
Pin Count
6
Number of Elements
2
Polarity
NPN, PNP
Element Configuration
Dual
Power Dissipation
187mW
Transistor Application
SWITCHING
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage
50V
hFE Min
8
Resistor - Base (R1)
2.2k Ω
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
2.2k Ω
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

MUN5331DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5331DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5331DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MUN5331DW1T1G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
Complementary Bipolar Digital Transistor (BRT)
MUN5331DW1 Series 50 V 100 mA 256 mW Surface Mount NPN Transistor - SOT-363
DIGITAL TRANSISTOR, 50V, 0.1A, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 2.2kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to MUN5331DW1T1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Radiation Hardening

RoHS Status

Lead Free

Mount

Reach Compliance Code

Qualification Status

Transistor Element Material

JESD-30 Code

Configuration

Power - Max

Polarity/Channel Type

View Compare
MUN5331DW1T1G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

22 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

Tape & Reel (TR)

2009

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

Tin (Sn)

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO 1

BIP General Purpose Small Signal

50V

250mW

GULL WING

260

100mA

40

MUN53**DW1

6

2

NPN, PNP

Dual

187mW

SWITCHING

1 NPN, 1 PNP - Pre-Biased (Dual)

50V

100mA

8 @ 5mA 10V

500nA

250mV @ 5mA, 10mA

50V

8

2.2k Ω

100mA

2.2k Ω

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-
MUN5234DW1T1

ON Semiconductor

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

6

Tape & Reel (TR)

2005

e0

-

Obsolete

1 (Unlimited)

6

EAR99

Tin/Lead (Sn/Pb)

150°C

-55°C

BUILT IN BIAS RESISTOR RATIO IS 2.14

BIP General Purpose Small Signal

50V

250mW

GULL WING

240

100mA

30

MUN52**DW1T

6

2

NPN

Dual

187mW

SWITCHING

2 NPN - Pre-Biased (Dual)

50V

100mA

80 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

-

22k Ω

100mA

47k Ω

-

Non-RoHS Compliant

Contains Lead

Surface Mount

not_compliant

Not Qualified

-

-

-

-

-

MUN5331DW1T1G vs MUN5234DW1T1
MUN5332DW1T1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

2 Weeks

Surface Mount

6-TSSOP, SC-88, SOT-363

YES

6

Tape & Reel (TR)

2012

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

Tin (Sn)

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO 1

BIP General Purpose Small Signal

50V

250mW

GULL WING

260

100mA

40

MUN53**DW1

6

2

NPN, PNP

Dual

187mW

SWITCHING

1 NPN, 1 PNP - Pre-Biased (Dual)

50V

100mA

15 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

15

4.7k Ω

100mA

4.7k Ω

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

MUN5331DW1T1G vs MUN5332DW1T1G
MUN5136DW1T1

ON Semiconductor

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

Tape & Reel (TR)

2005

e0

-

Obsolete

1 (Unlimited)

6

EAR99

Tin/Lead (Sn/Pb)

-

-

BUILT-IN BIAS RESISTOR RATIO IS 1

BIP General Purpose Small Signal

-50V

250mW

GULL WING

240

-100mA

30

MUN51**DW1T

6

2

-

-

-

SWITCHING

2 PNP - Pre-Biased (Dual)

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

-

100k Ω

-

100k Ω

-

Non-RoHS Compliant

Contains Lead

Surface Mount

not_compliant

Not Qualified

SILICON

R-PDSO-G6

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

250mW

PNP

MUN5331DW1T1G vs MUN5136DW1T1

Certification

Related parts for MUN5331DW1T1G

MUN5212DW1T1

ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363
MUN5316DW1T1

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363
MUN5234DW1T1

ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363
MUN5332DW1T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363
MUN5136DW1T1

ON Semiconductor

TRANS 2PNP PREBIAS 0.25W SOT363

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MUN5331DW1T1G Specification

Part Number	Manufacturers	Description	Stock	Price
MUN5331DW1T1G DISTI #32738157	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-P RoHS: Compliant	36000	18000 $0.0267
MUN5331DW1T1G DISTI #33791859	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-P RoHS: Compliant	21000	18000 $0.0246
MUN5331DW1T1G DISTI #MUN5331DW1T1G-ND	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT363 RoHS: Compliant	0
NSVMUN5331DW1T1G DISTI #NSVMUN5331DW1T1G-ND	ON Semiconductor	TRANS NPN/PNP 50V BIPO SC88 RoHS: Compliant	0	3000 $0.11227
MUN5331DW1T1G DISTI #V36:1790_07278215	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-P RoHS: Compliant	0
MUN5331DW1T1G DISTI #MUN5331DW1T1G	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363	0	12500 $0.02614 25000 $0.02597 37500 $0.02564 62500 $0.02532 125000 $0.02469
MUN5331DW1T1G DISTI #MUN5331DW1T1G	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 RoHS: Compliant	0	18000 $0.02431 36000 $0.02416 54000 $0.02385 90000 $0.02354 180000 $0.02296
NSVMUN5331DW1T1G DISTI #NSVMUN5331DW1T1G	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 RoHS: Compliant	0	6000 $0.0769 12000 $0.0769 18000 $0.0759 30000 $0.0749 60000 $0.0729
MUN5331DW1T1G DISTI #49X8906	ON Semiconductor	BRT TRANSISTOR, 50V, 2.2K/2.2K, SOT-363, Digital	0	1 $0.297 10 $0.2 100 $0.085 1000 $0.06
MUN5331DW1T1G DISTI #71J6208	ON Semiconductor	BRT TRANSISTOR, 50V, 2.2K/2.2K, SOT-363, Digital	0	1 $0.046 3000 $0.046 24000 $0.038 45000 $0.031
MUN5331DW1T1G DISTI #863-MUN5331DW1T1G	ON Semiconductor	Bipolar Transistors - Pre-Biased 100mA Complementa RoHS: Compliant	10601	1 $0.28 10 $0.191 100 $0.08 1000 $0.055 3000 $0.043 9000 $0.037 24000 $0.034 45000 $0.032
MUN5331DW1T1 DISTI #863-MUN5331DW1T1	ON Semiconductor	Bipolar Transistors - Pre-Biased 100mA Complementa RoHS: Not Compliant	0
NSVMUN5331DW1T1G DISTI #863-NSVMUN5331DW1T1G	ON Semiconductor	Bipolar Transistors - Pre-Biased SS SC88 BR XSTR D RoHS: Compliant	0	1 $0.48 10 $0.337 100 $0.155 1000 $0.119 3000 $0.101
MUN5331DW1T1G DISTI #	ON Semiconductor	Small Signal Bipolar Transistor, 0.1A I(C), 50V V( RoHS: Compliant	205300	1 $0.03 25 $0.03 100 $0.03 500 $0.03 1000 $0.03
MUN5331DW1T1G DISTI #3003740	ON Semiconductor	DIGITAL TRANSISTOR, 50V, 0.1A, SOT-363 RoHS: Compliant	18000	5 $0.289 25 $0.217 100 $0.131 250 $0.104 500 $0.075 1000 $0.066
MUN5331DW1T1G DISTI #3003740	ON Semiconductor	DIGITAL TRANSISTOR, 50V, 0.1A, SOT-363	18000	5 $0.163 25 $0.159 100 $0.0651 250 $0.0599 500 $0.0461

MUN5331~~(1)~~
MUN533~~(8)~~
MUN53~~(21)~~
MUN5~~(54)~~
MUN~~(54)~~

ON Semiconductor MUN5331DW1T1G

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