ON Semiconductor MUN5315DW1T1G
- Part Number:
- MUN5315DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844569-MUN5315DW1T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT363
- Datasheet:
- MUN5315DW1T1G
ON Semiconductor MUN5315DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5315DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN53**DW1
- Pin Count6
- Qualification StatusNot Qualified
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation187mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min160
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN5315DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5315DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5315DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5315DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5315DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5315DW1T1G More Descriptions
MUN Series 50 V 100 mA 10 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 10Kohm, Sc88; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Onsemi MUN5315DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 10Kohm, Sc88; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Onsemi MUN5315DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
The three parts on the right have similar specifications to MUN5315DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentRoHS StatusLead FreeMountReach Compliance CodeResistor - Emitter Base (R2)Radiation HardeningTransistor Element MaterialJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeView Compare
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MUN5315DW1T1GACTIVE (Last Updated: 2 days ago)2 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTORBIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW16Not Qualified100mA50V2NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V16010k Ω100mAROHS3 CompliantLead Free----------
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--Surface Mount6-TSSOP, SC-88, SOT-363-6Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 2.14BIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN52**DW1T6Not Qualified--2NPNDual187mWSWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-22k Ω100mANon-RoHS CompliantContains LeadSurface Mountnot_compliant47k Ω------
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ACTIVE (Last Updated: 1 day ago)2 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW16---2NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V154.7k Ω100mARoHS CompliantLead Free--4.7k ΩNo-----
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--Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99Tin/Lead (Sn/Pb)--BUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V250mWGULL WING240-100mA30MUN51**DW1T6Not Qualified--2---SWITCHING2 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-100k Ω-Non-RoHS CompliantContains LeadSurface Mountnot_compliant100k Ω-SILICONR-PDSO-G6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR250mWPNP
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