ON Semiconductor MUN5311DW1T1G
- Part Number:
- MUN5311DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068352-MUN5311DW1T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT363
- Datasheet:
- MUN5311DW1T1G
ON Semiconductor MUN5311DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5311DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
- HTS Code8541.21.00.95
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN53**DW1
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation187mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- hFE Min35
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10k Ω
- Height900μm
- Length2mm
- Width1.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description:
The MUN5311DW1T1G is a pre-biased NPN/PNP transistor array from ON Semiconductor. It is housed in a SOT-363 package and is designed for use in low-power, low-voltage applications. The device features a low saturation voltage, low input bias current, and low output impedance. It is ideal for use in applications such as power management, motor control, and signal conditioning.
Features:
• Low saturation voltage
• Low input bias current
• Low output impedance
• High gain
• High switching speed
• High current gain
• High voltage gain
• High frequency response
• Low power consumption
• High reliability
• RoHS compliant
Applications:
The MUN5311DW1T1G is suitable for use in a variety of applications, including:
• Power management
• Motor control
• Signal conditioning
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical devices
The MUN5311DW1T1G is a pre-biased NPN/PNP transistor array from ON Semiconductor. It is housed in a SOT-363 package and is designed for use in low-power, low-voltage applications. The device features a low saturation voltage, low input bias current, and low output impedance. It is ideal for use in applications such as power management, motor control, and signal conditioning.
Features:
• Low saturation voltage
• Low input bias current
• Low output impedance
• High gain
• High switching speed
• High current gain
• High voltage gain
• High frequency response
• Low power consumption
• High reliability
• RoHS compliant
Applications:
The MUN5311DW1T1G is suitable for use in a variety of applications, including:
• Power management
• Motor control
• Signal conditioning
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical devices
MUN5311DW1T1G More Descriptions
Dual Bias Resistor BJT NPN/PNP Transistor 50 Volt 100mA 6-Pin SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
MUN5311DW1T1G NPN PNP Digi Transistor,100mA 50V 10 kOhm, Ratio Of 1,6-Pin SC-88 | ON Semiconductor MUN5311DW1T1G
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5311DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
MUN5311DW1T1G NPN PNP Digi Transistor,100mA 50V 10 kOhm, Ratio Of 1,6-Pin SC-88 | ON Semiconductor MUN5311DW1T1G
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5311DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
The three parts on the right have similar specifications to MUN5311DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusView Compare
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MUN5311DW1T1GACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 18541.21.00.95BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW16100mA50V2NPN, PNPDual187mWSWITCHINGHalogen Free1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V250mV50V3510k Ω100mA10k Ω900μm2mm1.25mmNo SVHCNoROHS3 CompliantLead Free------
-
---Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2009e0-Obsolete1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR-BIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN53**DW16--2NPN, PNPDual187mWSWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V---4.7k Ω100mA------Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn80Pb20)not_compliantR-PDSO-G6Not Qualified
-
---Surface Mount6-TSSOP, SC-88, SOT-363-6Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 2.14-BIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN52**DW1T6--2NPNDual187mWSWITCHING-2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V---22k Ω100mA47k Ω-----Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliant-Not Qualified
-
ACTIVE (Last Updated: 1 day ago)2 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1-BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW16--2NPN, PNPDual187mWSWITCHING-1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V--154.7k Ω100mA4.7k Ω----NoRoHS CompliantLead Free-Tin (Sn)---
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